Room-temperature ferroelectricity in van der Waals SnP<sub>2</sub>S<sub>6</sub>

doi:10.1007/s11467-023-1369-0

Front. Phys.

2024, Vol. 19

Issue (4) : 43202 https://doi.org/10.1007/s11467-023-1369-0

RESEARCH ARTICLE

Room-temperature ferroelectricity in van der Waals SnP₂S₆

Chaowei He¹, Jiantian Zhang¹, Li Gong², Peng Yu¹(

)

¹. State Key Laboratory of Optoelectronic Materials and Technologies Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
². Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou 510275, China

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Abstract

Two-dimensional (2D) ferroelectric materials, which possess electrically switchable spontaneous polarization and can be easily integrated with semiconductor technologies, is of utmost importance in the advancement of high-integration low-power nanoelectronics. Despite the experimental discovery of certain 2D ferroelectric materials such as CuInP₂S₆ and In₂Se₃, achieving stable ferroelectricity at room temperature in these materials continues to present a significant challenge. Herein, stable ferroelectric order at room temperature in the 2D limit is demonstrated in van der Waals SnP₂S₆ atom layers, which can be fabricated via mechanical exfoliation of bulk SnP₂S₆ crystals. Switchable polarization is observed in thin SnP₂S₆ of ~7 nm. Importantly, a van der Waals ferroelectric field-effect transistor (Fe-FET) with ferroelectric SnP₂S₆ as top-gate insulator and p-type WTe_0.6Se_1.4 as the channel was designed and fabricated successfully, which exhibits a clear clockwise hysteresis loop in transfer characteristics, demonstrating ferroelectric properties of SnP₂S₆ atomic layers. In addition, a multilayer graphene/SnP₂S₆/multilayer graphene van der Waals vertical heterostructure phototransistor was also fabricated successfully, exhibiting improved optoelectronic performances with a responsivity (R) of 2.9 A/W and a detectivity (D) of 1.4 × 10¹² Jones. Our results show that SnP₂S₆ is a promising 2D ferroelectric material for ferroelectric-integrated low-power 2D devices.

Keywords two-dimensional ferroelectric materials ferroelectric field-effect transistors photodetectors

Corresponding Author(s): Peng Yu

Issue Date: 27 December 2023

Cite this article:

Chaowei He,Jiantian Zhang,Li Gong, et al. Room-temperature ferroelectricity in van der Waals SnP₂S₆[J]. Front. Phys. , 2024, 19(4): 43202.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1369-0
https://academic.hep.com.cn/fop/EN/Y2024/V19/I4/43202

Fig.1 Preparation and basic characterization of SnP₂S₆ crystal. (a) Crystal structure of SnP₂S₆ viewed along the b-axis and (b) the projection of the structure onto the (001) plane. Black dashed lines indicate unit cells. Blue sphere: Sn atoms; yellow sphere: P atoms; green sphere: S atoms. (c) Illustration of the growth of high-quality SnP₂S₆ single crystals from high-purity tin, phosphorus, and sulfur powders with iodine. (d) Optical image of high-quality SnP₂S₆ single crystal. (e) XRD patterns of SnP₂S₆ powder.

Fig.2 Characterization of SnP₂S₆ thin film. (a) The EDS analysis and the atomic ratio result. Upper left panel: Scanning electron microscopy (SEM) image for SnP₂S₆ thin film. Upper right panel: The EDS analysis and the atomic ratio result. Lower panel: EDS elemental mapping of the upper left panel. (b) STEM image and matched crystal structures of SnP₂S₆. Blue sphere: Sn atoms; yellow sphere: P atoms; green sphere: S atoms. (c) Optical images of exfoliated SnP₂S₆ large area thin films, the area within the dashed line is a single atomic layer. (d) UV–Vis–NIR absorption spectrum of SnP₂S₆. (e) Absorption bandgap as a function of thickness. (f?h) PL spectra of 1?3 L at 78 K (f), 150 K (g) and 295 K (h). (i) SHG under 800 nm wavelength laser. (j) Polar plots of the SHG intensity as a function of the excitation laser linear polarization. (k) Peak center position as a function of the excitation laser linear polarization.

Fig.3 Atomic force microscope (AFM) and piezoresponse force microscope (PFM) characterozations of SnP₂S₆. (a–c) AFM topography (a) PFM amplitude (b) and PFM phase (c) of a SnP₂S₆ thin film at room temperature. (d) Height of the thin film for (a). (e) PFM amplitude and (f) PFM phase measurement of ferroelectric domains in thin films. (g) AFM topography for 7 nm SnP₂S₆ thin film. (h) PFM phase images of thin film for (g) with written box-in-box patterns at room temperature with reverse DC bias of +2 V, ?2 V and +2 V. (i) The corresponding PFM amplitude and phase hysteresis loops during the switching process for 7 nm SnP₂S₆ thin film.

Fig.4 A SnP₂S₆/WTe_0.6Se_1.4 van der Waals ferroelectric field-effect transistor (Fe-FET). (a) Schematic diagram of the Fe-FET. Few-layer WTe_0.6Se_1.4 is applied as the channel material. The top-gate stack consists of CIPS as the ferroelectric gate insulator and h-BN as the gate insulator. Few-layer graphene and Ni/Au act as the gate electrodes. (b) Top-view optical image of 2D heterostructure, the inset is top-view image of as-fabricated device. (c) Output curves for different gate voltages at room temperature. (d) Top-gate transfer curves of the Fe-FET measured at room temperature with a floating gate (scanning from 0.5 V to ?0.5 V, then ?0.5 V to 0.5 V).

Fig.5 Optoelelctronic characterization of SnP₂S₆ parallel phototransistor under 405 nm laser. (a) Top-view optical image of the SnP₂S₆ parallel phototransistor, height of SnP₂S₆ thin film is 75 nm. The active channel area of parallel phototransistor is 1.79 × 10^?7 cm². (b) The AFM characterization of thin film shown in (a). (c) Output curves for different light power densities at temperature. (d) Responsivity and detectivity as functions of light power density for V_bias = 1 V at room temperature. (e) Photocurrent dependent on light power density at room temperature, where the light power density is on the logarithmic coordinate axis. (f) Time-resolved photoresponse of the parallel transistors at V_bias = 1 V under laser (λ = 405 nm) illumination, the rise time τ₁ is 100 ms and the decay time τ₂ is 200 ms.

Fig.6 Optoelelctronic characterization of SnP₂S₆ vertical transistor under 405 nm laser. (a) Top-view optical image of the vertical transistor. Yellow area of G-bottom is single layer bottom graphene, green area of G-top is top graphene with a thickness of 6 nm, and red area of SPS is few-layer SnP₂S₆ with a thickness of 15 nm. The active channel area of vertical transistor is 3.77 × 10^?7 cm². (b) Output curves for different light power densities at temperature. (c) Responsivity and detectivity as functions of light power density for V_bias = 1 V at room temperature. (d) Photocurrent dependent on light power density at room temperature, where the light power density is on the logarithmic coordinate axis. (e) Time-resolved photoresponse of the parallel transistors at V_bias = 1 V under laser (λ = 405 nm) illumination, the rise time τ₁ is 20 ms and the decay time τ₂ is 40 ms.

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