Spin transport of half-metal Mn<sub>2</sub>X<sub>3</sub> with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives

doi:10.1007/s11467-023-1367-2

Front. Phys.

2024, Vol. 19

Issue (4) : 43201 https://doi.org/10.1007/s11467-023-1367-2

RESEARCH ARTICLE

Spin transport of half-metal Mn₂X₃ with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives

Bin Liu¹, Xiaolin Zhang^1,², Jingxian Xiong³, Xiuyang Pang³, Sheng Liu¹, Zixin Yang³, Qiang Yu^3,⁵, Honggen Li⁶, Sicong Zhu^1,⁴(

), Jian Wu³(

)

¹. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China
². Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physical and Technology, Wuhan University, Wuhan 430072, China
³. College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
⁴. Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore
⁵. i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and NanoBionics, Chinese Academy of Sciences, Suzhou 215123, China
⁶. Institute of Optical Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China

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Abstract

Currently, magnetic storage devices are encountering the problem of achieving lightweight and high integration in mobile computing devices during the information age. As a result, there is a growing urgency for two-dimensional half-metallic materials with a high Curie temperature (T_C). This study presents a theoretical investigation of the fundamental electromagnetic properties of the monolayer hexagonal lattice of Mn₂X₃ (X = S, Se, Te). Additionally, the potential application of Mn₂X₃ as magneto-resistive components is explored. All three of them fall into the category of ferromagnetic half-metals. In particular, the Monte Carlo simulations indicate that the T_C of Mn₂S₃ reachs 381 K, noticeably greater than room temperature. These findings present notable advantages for the application of Mn₂S₃ in spintronic devices. Hence, a prominent spin filtering effect is apparent when employing non-equilibrium Green’s function simulations to examine the transport parameters. The resulting current magnitude is approximately 2 × 10⁴ nA, while the peak gigantic magnetoresistance exhibits a substantial value of 8.36 × 10¹⁶ %. It is noteworthy that the device demonstrates a substantial spin Seebeck effect when the temperature differential between the electrodes is modified. In brief, Mn₂X₃ exhibits outstanding features as a high T_C half-metal, exhibiting exceptional capabilities in electrical and thermal drives spin transport. Therefore, it holds great potential for usage in spintronics applications.

Keywords half-metals Mn₂X₃ high Curie temperature electrical and thermal GMR

Corresponding Author(s): Sicong Zhu,Jian Wu

Issue Date: 27 December 2023

Cite this article:

Bin Liu,Xiaolin Zhang,Jingxian Xiong, et al. Spin transport of half-metal Mn₂X₃ with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives[J]. Front. Phys. , 2024, 19(4): 43201.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1367-2
https://academic.hep.com.cn/fop/EN/Y2024/V19/I4/43201

Fig.1 Mn₂X₃ crystal structure and magnetic ground states. (a) Top, and (b) side views of Mn₂X₃ (X = S, Se, Te) monolayers, yellow indicates non-metallic elements, and purple is Mn. (c) FM configuration and three AFM configurations of Mn₂X₃ monolayers, red and blue indicate opposite spins.

Fig.2 Curie temperature of Mn₂X₃. Curie temperature (T_C) of Mn₂S₃, Mn₂Se₃, and Mn₂Te₃ in (a), (b), and (c), respectively. (d) The Curie temperature of common 2D materials and Mn₂X₃.

Fig.3 Electromagnetic properties of Mn₂X₃ and half-metallic transport diagram. (a) The Brillouin zone path of Mn₂X₃. Band structure and DOS of Mn₂X₃ in (b), (c), and (d), respectively. Electron transport models based on half-metallic materials with electrons in parallel (e) and anti-parallel configurations (f), respectively.

Fig.4 Performance at two magnetization configurations (PC and APC) of devices based on Mn₂S₃. (a) A diagram of the device model. (b) The spin-resolved I−V curves. (c) Giant magnetoresistive. (d, e) The spin resolved band structures of electrodes at two magnetization configurations.

Fig.5 Thermal spin performance of devices. The thermal spin resolved current with ΔT fixed for the device in the (a) APC and (b) PC. (c) Thermally induced GMR versus

T L

. The thermal spin-resolved current when

T L

fixed for the device in the (d) APC and (e) PC. (f) Thermally induced GMR versus ΔT.

Fig.6 Transport spectra of the device. Spin-dependent transport spectra of the devices in the (a) APC and (b) PC at zero bias.

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[1]	Xiaolin Zhang, Pengwei Gong, Fangqi Liu, Kailun Yao, Jian Wu, Sicong Zhu. High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn₂NO₂)[J]. Front. Phys. , 2022, 17(5): 53510-.

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