Simulation of inhomogeneous strain in Ge-Si core-shell nanowires

doi:10.1007/s11460-009-0050-x

Front Elect Electr Eng Chin

2009, Vol. 4

Issue (3) : 342-347 https://doi.org/10.1007/s11460-009-0050-x

RESEARCH ARTICLE

Simulation of inhomogeneous strain in Ge-Si core-shell nanowires

Yuhui HE¹, Yuning ZHAO¹, Chun FAN², Xiaoyan LIU¹, Ruqi HAN¹(

)

1. Institute of Microelectronics, Peking University, Beijing 100871, China; 2. Computer Center of Peking University, Beijing 100871, China

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Abstract

This paper studies the elastic deformation field in lattice-mismatched Ge-Si core-shell nanowires (NWs). Infinite wires with a cylindrical cross section under the assumption of translational symmetry are considered. The strain distributions are found by minimizing the elastic energy per unit cell using finite element method. This paper finds that the trace of the strain is discontinuous with a simple, almost piecewise variation between core and shell, whereas the individual components of the strain can exhibit complex variations. The simulation results are prerequisite of strained band structure calculation, and pave a way for further investigation of strain effect on the related transport property simulation.

Keywords core-shell nanowire strain continuum elasticity

Corresponding Author(s): HAN Ruqi,Email:hanrq@ime.pku.edu.cn

Issue Date: 05 September 2009

Cite this article:

Yuhui HE,Yuning ZHAO,Chun FAN, et al. Simulation of inhomogeneous strain in Ge-Si core-shell nanowires[J]. Front Elect Electr Eng Chin, 2009, 4(3): 342-347.

URL:

https://academic.hep.com.cn/fee/EN/10.1007/s11460-009-0050-x
https://academic.hep.com.cn/fee/EN/Y2009/V4/I3/342

Fig.1 Schematic view of Ge-Si core-shell nanowires. (a) Side view of Ge-Si core-shell nanowire; (b) top view of Ge-Si core-shell nanowire

Fig.2 distribution of strain energy in NW cross-section. (a) Ge core radius= 7 nm and Si shell thicknesses = 1 nm; (b) = 7 nm and = 2 nm; (c) = 7 nm and = 3 nm

Fig.3 distribution of strain tensor components () in NW cross-section, with = 6 nm and = 2 nm. (a) (); (b) (); (c) ()

Fig.4 NW axial strain in Ge core (: dash-triangle line) and in Si shell (: solid-square line) versus Si shell thickness . Here = 6 nm

Fig.5 distribution of strain energy () and strain tensor components () in cross-section of Ge-Si-Ge core-multishell NW, with Ge core radius = 6 nm, Si shell thickness = 3 nm, and outer Ge shell thickness . (a) Strain energy; (b) (); (c) (); (d) ()

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