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Frontiers of Mechanical Engineering

ISSN 2095-0233

ISSN 2095-0241(Online)

CN 11-5984/TH

Postal Subscription Code 80-975

2018 Impact Factor: 0.989

Front. Mech. Eng.    2023, Vol. 18 Issue (3) : 35    https://doi.org/10.1007/s11465-023-0751-5
RESEARCH ARTICLE
Sub-nanometer finishing of polycrystalline tin by inductively coupled plasma-assisted cutting
Peng LYU1, Min LAI1(), Yifei SONG1, Zhifu XUE1, Fengzhou FANG1,2()
1. State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of MicroNano Manufacturing Technology—MNMT, Tianjin University, Tianjin 300072, China
2. Centre of MicroNano Manufacturing Technology—MNMT-Dublin, School of Mechanical & Materials Engineering, University College Dublin, Dublin 4, Ireland
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Abstract

Polycrystalline tin is an ideal excitation material for extreme ultraviolet light sources. However, the existence of grain boundary (GB) limits the surface roughness of polycrystalline tin after single-point diamond turning (SPDT). In this work, a novel method termed inductively coupled plasma (ICP)-assisted cutting was developed for the sub-nanometer finishing of polycrystalline tin. The relationship between ICP power, processing time, and modification depth was established by thermodynamic simulation, and the fitted heat transfer coefficient of polycrystalline tin was 540 W/(m2·K). The effects of large-thermal-gradient ICP treatment on the microstructure of polycrystalline tin were studied. After 0.9 kW ICP processing for 3.0 s, corresponding to the temperature gradient of 0.30 K/µm, the grain size of polycrystalline tin was expanded from a size of approximately 20–80 μm to a millimeter scale. The Taguchi method was used to investigate the effects of rotational speed, depth of cut, and feed rate on SPDT. Experiments conducted based on the ICP system indicated that the plasma-assisted cutting method promoted the reduction of the influence of GB steps on the finishing of polycrystalline tin, thereby achieving a surface finish from 8.53 to 0.80 nm in Sa. The results of residual stress release demonstrated that the residual stress of plasma-assisted turning processing after 504 h stress release was 10.7 MPa, while that of the turning process without the ICP treatment was 41.6 MPa.

Keywords plasma-assisted cutting      polycrystalline tin      single-point diamond turning      surface roughness     
Corresponding Author(s): Min LAI,Fengzhou FANG   
Just Accepted Date: 29 March 2023   Issue Date: 03 August 2023
 Cite this article:   
Peng LYU,Min LAI,Yifei SONG, et al. Sub-nanometer finishing of polycrystalline tin by inductively coupled plasma-assisted cutting[J]. Front. Mech. Eng., 2023, 18(3): 35.
 URL:  
https://academic.hep.com.cn/fme/EN/10.1007/s11465-023-0751-5
https://academic.hep.com.cn/fme/EN/Y2023/V18/I3/35
Fig.1  Principle of plasma-assisted cutting treatment for polycrystalline tin. Ar: argon.
ParametersValue
Frequency27.12 MHz
Power0.4, 0.6, 0.7, 0.8, 0.9, and 1.0 kW
Excitation gas and flowAr, 2 L/min
Cooling gas and flowAr, 15 L/min
Initial temperature300 K
Tab.1  ICP simulation parameters
Fig.2  Schematic of the simulation: (a) atmospheric inductively coupled plasma torch geometry model and (b) heat transfer from inductively coupled plasma to tin.
Fig.3  (a) Schematic and (b) photograph of the inductively coupled plasma setup. Ar: argon, RF: radio frequency.
LevelRotational speed/(r·min?1)Feed rate/(μm·r?1)Cut depth/μmBlank group
Level 110000.90.61
Level 220001.81.02
Level 330002.72.03
Tab.2  Orthogonal parameters and corresponding values
Fig.4  Temperature simulation of the inductively coupled plasma torch: (a) 0.4 kW, (b) 0.6 kW, (c) 0.7 kW, (d) 0.8 kW, (e) 0.9 kW, and (f) 1.0 kW.
Power/kWABσGranT/(K·μm?1)
0.4751.037?68.88912.4320.12
0.6262.726660.7795.4110.21
0.7250.095770.3284.9680.24
0.8243.535860.8804.6710.27
0.9246.601937.8244.4720.30
1.0256.6101004.0794.3500.32
Tab.3  Fitted coefficients and thermal gradient in each group
Fig.5  (a) Section temperature distribution at 900 W and (b) error distribution after Gaussian fitting.
Fig.6  (a) Infrared thermal image of polycrystalline tin after inductively coupled plasma treatment at 0.9 kW for 3.0 s and (b) section of polycrystalline tin in the heat transfer simulation at 0.9 kW for 3.0 s.
Fig.7  Characterization of polycrystalline tin cross section: (a) laser confocal microscope image of the unmodified sample, (b) scanning electron microscopy (SEM) image of the 500 μm × 500 μm area in (a), (c) electron backscatter diffraction (EBSD) inverse pole figure map of the same surface in (b), (d) EBSD grain boundary map of the same surface in (b), (e) laser confocal microscope image of the modified sample, (f) SEM image of the 500 μm × 500 μm area in (e), (g) EBSD inverse pole figure of the same surface in (f), (h) EBSD grain boundary map of the same surface in (f), (i) SEM image of the 1500 μm × 1500 μm area in (e); (j) EBSD inverse pole figure of the same surface in (i), and (k) EBSD grain boundary map of the same surface in (i).
Fig.8  Section of polycrystalline tin in the heat transfer simulation at different powers. (a) P = 0.4 kW, t = 10.50 s; (b) P = 0.6 kW, t = 4.75 s; (c) P = 0.7 kW, t = 3.90 s; (d) P = 0.8 kW, t = 3.36 s; (e) P = 1.0 kW, t = 2.70 s.
Fig.9  Surface roughness in Sa of the polycrystalline tin samples modified using different powers.
Fig.10  Laser confocal microscope images of the polycrystalline tin samples modified using different radio frequency powers: (a) 0 kW, (b) 0.4 kW, (c) 0.7 kW, and (d) 0.9 kW.
Fig.11  Characterization of the polycrystalline tin surface: (a) scanning electron microscopy image of the 500 μm × 500 μm area in the unmodified sample, (b) electron backscatter diffraction inverse pole figure of the same surface in (a), (c) grain boundary inverse pole figure of the same surface in (a), (d) scanning electron microscopy image of the 500 μm × 500 μm area in the modified sample, (e) electron backscatter diffraction inverse pole figure of the same surface in (d), and (f) grain boundary inverse pole figure of the same surface in (d).
FactorsDegree of freedomSum of squaresMean of squaresF-valuep-valueContribution rate/%
Rotational speed27.4403.72067.0100.01593.40
Feed rate20.3110.1552.8010.2633.90
Depth of cut20.1040.0520.9380.5161.31
Error20.1110.056??1.39
Total87.966????
Tab.4  ANOVA results from the mean surface roughness
FactorsS/N ratio/dBDelta
Level 1Level 2Level 3
Rotational speed?10.718?6.700?12.8456.145
Feed rate?9.394?10.205?10.6641.269
Depth of cut?9.851?9.851?10.5610.710
Blank group?10.510?10.092?9.6610.849
Tab.5  S/N response table for the surface roughness
FactorsSa/nmDelta
Level 1Level 2Level 3
Rotational speed3.4402.1174.3972.220
Feed rate3.1233.3133.5770.453
Depth of cut3.2033.3433.4670.263
Blank group3.4873.3073.2200.267
Tab.6  Average surface roughness in Sa
Fig.12  Surface roughness under different parameters: (a) rotational speed of 3000 r/min, feed rate of 1.8 μm/r, and cut depth of 0.6 μm and (b) rotational speed of 2000 r/min, feed rate of 0.9 μm/r, and cut depth of 2 μm.
Fig.13  Electron backscatter diffraction (EBSD) result of the sample in Fig. 14(b). (a) scanning electron microscopy image of the 500 μm × 500 μm area, (b) EBSD inverse pole figure of the same surface in (a), and (c) EBSD grain boundary image of the same surface in (a).
Fig.14  Surface roughness in Sa under optimal orthogonal parameters: (a) without plasma treatment, (b) after 0.9 kW plasma treatment at the junction of two grains, and (c) after 0.9 kW plasma treatment in one grain.
Fig.15  Photograph of polycrystalline tin after processing with the optimal parameters of plasma-assister cutting.
Fig.16  Surface roughness in Sa under optimal parameters: (a) after 0.9 kW plasma treatment in one of the grains during 504 h standing, (b) after 0.9 kW plasma treatment at the junction of two grains during 504 h standing, (c) without plasma treatment during 504 h standing, (d) after 0.9 kW plasma treatment in one of the grains after 504 h standing, (e) after 0.9 kW plasma treatment at the junction of two grains after 504 h standing, and (f) without plasma treatment after 504 h standing.
Fig.17  Residual stress comparison of workpieces with and without PaC processing after standing for 72 and 504 h. PaC: plasma-assisted cutting.
Abbreviations
ACSAtomic and close-to-atomic scale
AlAluminium
ANOVAAnalysis of variance
ArArgon
CuCopper
EBSDElectron backscatter diffraction
EBSMElectron beam selective melting
GBGrain boundary
ICPInductively coupled plasma
PaCPlasma-assisted cutting
RFRadio frequency
SEMScanning electron microscopy
S/NSignal-to-noise
SPDTSingle-point diamond turning
UCTUndeformed chip thickness
WLWhite light
Variables
AHeight of Gaussian function
BOffset of the Gaussian function along the y-axis
CPPlasma’s specific heat capacity
Cp1Tin’s specific thermal capacity
FLorentz force
GranTInitial temperature gradient
hCoefficient of heat transfer
IMatrix of identity
kThermal conductivity
k1Thermal conductivity of tin
nNormal vector
pPressure
q0Internal heat flow
qPlasma’s heat flux conductivity vector
q1Vector of heat flux conductivity
QSource of heat
Q1Heat source of tin
QpWork of pressure
QtedThermoelastic damping
QvdWork of viscous dissipation
TPlasma temperature
T1Temperature of tin
TbottomBottom temperature of polycrystalline tin
TextICP action section temperature
Text0Central temperature of the heat source
uPlasma’s velocity vector
u1Tin’s velocity vector
αCentral angle of each point on the Debye ring
ρPlasma’s fluid density
ρ1Density of tin
μDynamic viscosity
σStandard deviation of the Gaussian function
  
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