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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

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Front Optoelec Chin    2011, Vol. 4 Issue (2) : 141-145    https://doi.org/10.1007/s12200-011-0158-5
RESEARCH ARTICLE
Synthesis and growth of nonlinear infrared crystal material CdSe via seeded oriented temperature gradient solution zoning method
Youbao NI, Haixin WU(), Mingsheng MAO, Chen LIN, Ganchao CHENG, Zhenyou WANG
Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
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Abstract

Single crystals of CdSe were grown by using seeded oriented temperature gradient solution zoning (S-TGSZ) method with the sizes of 20 mm in diameter and 80 mm in length. The crystals were characterized with X-ray diffraction, transmission spectrophotometer and infrared microscope. The transmission spectra showed that the infrared transmission is above 65% and the mean absorption was 0.01–0.04 cm-1 in the range of 2.5–20 μm. With 2.797 μm Cr,Er:YSGG laser as pumping source, experiments of optical parametric oscillator (OPO) were performed by using fabricated 5 mm×5 mm×30 mm device crystal. The signal and idler wavelengths and the output average power were respectively 4.3 μm, 8 μm and 400 μJ. Optical-to-optical conversion efficiency was obtained by 12%.
Keywords crystal growth      seeded oriented temperature gradient solution zoning (S-TGSZ) method      CdSe      optical parametric oscillator (OPO)     
Corresponding Author(s): WU Haixin,Email:hxwu@ircrystal.com   
Issue Date: 05 June 2011
 Cite this article:   
Youbao NI,Haixin WU,Mingsheng MAO, et al. Synthesis and growth of nonlinear infrared crystal material CdSe via seeded oriented temperature gradient solution zoning method[J]. Front Optoelec Chin, 2011, 4(2): 141-145.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-011-0158-5
https://academic.hep.com.cn/foe/EN/Y2011/V4/I2/141
Fig.1  Photograph of as-grown CdSe boule
Fig.1  Photograph of as-grown CdSe boule
Fig.2  XRD pattern of as-grown CdSe crystal from different positions (a) top, (b) middle, and (c) bottom, in which (b) indicates as hexagonal lattice phase of CdSe, (a) and (c) are the mixture of cadmium selenide and selenium
Fig.2  XRD pattern of as-grown CdSe crystal from different positions (a) top, (b) middle, and (c) bottom, in which (b) indicates as hexagonal lattice phase of CdSe, (a) and (c) are the mixture of cadmium selenide and selenium
Fig.3  XRD spectrum of (002) planes (a), and rocking curve of (002) plane (b)
Fig.3  XRD spectrum of (002) planes (a), and rocking curve of (002) plane (b)
Fig.4  (a) Typical polished CdSe element; (b) element’s image under infrared microscope with letters “CdSe”
Fig.4  (a) Typical polished CdSe element; (b) element’s image under infrared microscope with letters “CdSe”
Fig.5  (a) Transparency measured with unpolaried light of CdSe slice with thickness of 2 mm in region of 2.5-21 μm; (b) optical absorption spectrum in region of 2.5-21 μm
Fig.5  (a) Transparency measured with unpolaried light of CdSe slice with thickness of 2 mm in region of 2.5-21 μm; (b) optical absorption spectrum in region of 2.5-21 μm
Fig.6  Angular tuning characteristics for type II phase-matching OPO tunable laser radiation (2.797 μm) in crystal CdSe (* are our experimental data)
Fig.6  Angular tuning characteristics for type II phase-matching OPO tunable laser radiation (2.797 μm) in crystal CdSe (* are our experimental data)
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[1] Ruiqing HU, Yifeng SHI, Haifeng BAO. Luminescent disordered nanostructures: synthesis and characterization of CdSe nano-agglomerates[J]. Front. Optoelectron., 2018, 11(4): 385-393.
[2] Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Front Optoelec Chin, 2011, 4(2): 137-140.
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