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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

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Front Optoelec    2013, Vol. 6 Issue (1) : 97-101    https://doi.org/10.1007/s12200-012-0300-z
RESEARCH ARTICLE
Scalabilities of LEDs and VCSELs with tunnel-regenerated multi-active region structure
Xia GUO(), Xinxin LUAN, Wenjuan WANG, Chunwei GUO, Guangdi SHEN
Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing 100124, China
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Abstract

Scalabilities of light-emitting diodes (LEDs) and vertical-cavity surface-emitting lasers (VCSELs) with tunnel-regenerated multi-active-region (TRMAR) structure were investigated. It was found that the output optical power and quantum efficiency of these new LEDs with TRMAR increased with the number of its active regions, but the threshold gain and threshold current density decreased. However, for VCSELs with TRMAR, the differential quantum efficiency and optical power increased with the number of the active region. The results suggest that LEDs and VCSELs with the TRMAR structure have some potential advantages over the conventional LEDs or VCSELs in high internal quantum efficiency, low heat generation, high round-trip gain, and so on. These advantages will make TRMAR LEDs or VCSELs more attractive for the industrial application.
Keywords tunnel junction      cascade      scalability      light-emitting diodes (LEDs)      vertical-cavity surface-emitting lasers (VCSELs)     
Corresponding Author(s): GUO Xia,Email:guo@bjut.edu.cn   
Issue Date: 05 March 2013
 Cite this article:   
Xia GUO,Guangdi SHEN,Xinxin LUAN, et al. Scalabilities of LEDs and VCSELs with tunnel-regenerated multi-active region structure[J]. Front Optoelec, 2013, 6(1): 97-101.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0300-z
https://academic.hep.com.cn/foe/EN/Y2013/V6/I1/97
Fig.1  Schematic structure (a) and its corresponding energy band diagram (b) of tunnel-regenerated multi-active-region (TRMAR) structure
Fig.1  Schematic structure (a) and its corresponding energy band diagram (b) of tunnel-regenerated multi-active-region (TRMAR) structure
Fig.1  Schematic structure (a) and its corresponding energy band diagram (b) of tunnel-regenerated multi-active-region (TRMAR) structure
Fig.1  Schematic structure (a) and its corresponding energy band diagram (b) of tunnel-regenerated multi-active-region (TRMAR) structure
Fig.2  Dependence of on-axis optical power on number of active regions for LEDs with DBR structure. The difference between dashed line and the solid line with square is that for the former, absorbed carriers by tunnel junctions are reused, while for the latter, absorbed carriers occurred at the tunnel junction is considered as loss
Fig.2  Dependence of on-axis optical power on number of active regions for LEDs with DBR structure. The difference between dashed line and the solid line with square is that for the former, absorbed carriers by tunnel junctions are reused, while for the latter, absorbed carriers occurred at the tunnel junction is considered as loss
Fig.2  Dependence of on-axis optical power on number of active regions for LEDs with DBR structure. The difference between dashed line and the solid line with square is that for the former, absorbed carriers by tunnel junctions are reused, while for the latter, absorbed carriers occurred at the tunnel junction is considered as loss
Fig.2  Dependence of on-axis optical power on number of active regions for LEDs with DBR structure. The difference between dashed line and the solid line with square is that for the former, absorbed carriers by tunnel junctions are reused, while for the latter, absorbed carriers occurred at the tunnel junction is considered as loss
Fig.3  Dependence of threshold gain with number of active regions
Fig.3  Dependence of threshold gain with number of active regions
Fig.3  Dependence of threshold gain with number of active regions
Fig.3  Dependence of threshold gain with number of active regions
Fig.4  Dependence of calculated threshold current density with number of active regions
Fig.4  Dependence of calculated threshold current density with number of active regions
Fig.4  Dependence of calculated threshold current density with number of active regions
Fig.4  Dependence of calculated threshold current density with number of active regions
Fig.5  Dependence of differential quantum efficiency with number of active regions when was chosen to be 1, 5, 10, and 50 cm, respectively
Fig.5  Dependence of differential quantum efficiency with number of active regions when was chosen to be 1, 5, 10, and 50 cm, respectively
Fig.5  Dependence of differential quantum efficiency with number of active regions when was chosen to be 1, 5, 10, and 50 cm, respectively
Fig.5  Dependence of differential quantum efficiency with number of active regions when was chosen to be 1, 5, 10, and 50 cm, respectively
Fig.6  Dependence of calculated optical output power with number of active regions when was chosen to be 10 cm
Fig.6  Dependence of calculated optical output power with number of active regions when was chosen to be 10 cm
Fig.6  Dependence of calculated optical output power with number of active regions when was chosen to be 10 cm
Fig.6  Dependence of calculated optical output power with number of active regions when was chosen to be 10 cm
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