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Recent advances in development of vertical-cavity based short pulse source at 1.55 μm |
Zhuang ZHAO(), Sophie BOUCHOULE, Jean-Christophe HARMAND, Gilles PATRIARCHE, Guy AUBIN, Jean-Louis OUDAR |
Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Marcoussis, France |
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Abstract This paper reviews and discusses recent developments in passively mode-locked vertical external cavity surface emitting lasers (ML-VECSELs) for short pulse generation at 1.55 μm. After comparing ML-VECSELs to other options for short pulse generation, we reviewed the results of ML-VECSELs operating at telecommunication wavelength and point out the challenges in achieving sub-picosecond operation from a ML-VECSEL at 1.55 μm. We described our recent work in the VECSELs and semiconductor saturable absorber mirrors (SESAMs), their structure design, optimization and characterization, with the goal of moving the pulse width from picosecond to sub-picosecond.
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Keywords
semiconductor laser
vertical external cavity surface emitting laser (VECSEL)
indium phosphide
heat dissipation
saturable absorber mirror
mode-locking
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Corresponding Author(s):
ZHAO Zhuang,Email:zhuang.zhao@lpn.cnrs.fr
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Issue Date: 05 March 2014
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