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High fill factor over 82% enabled by a biguanide doping electron transporting layer in planar perovskite solar cells |
Ru GE, Fei QIN, Lin HU, Sixing XIONG, Yinhua ZHOU() |
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract N-type doping in electron transport materials is an effective way to improve the electron collection and enhance the performance of the perovskite solar cells (PSCs). Here, for the first time, an antibiotic and antimicrobial compound of 1-(o-Tolyl) biguanide (oTb) is used to dope the electron transport material of phenyl-C61-butyric acid methyl ester (PCBM). The oTb doping into the PCBM can increase the conductivity and reduce the work function of the PCBM. The oTb doping can significantly enhance the fill factor (FF) of the perovskite solar cells with the structure of glass/ITO/NiOx/MAPbI3/(oTb)PCBM/(PEIE)/Ag. For the cells without PEIE (polyethylenimine ethoxylated) coating, the oTb doping increases the FF from 0.57 to 0.73. S-shaped of the current density-voltage (J-V) characteristic under illumination is removed after the oTb doping. For the cells with PEIE coating between the (oTb)PCBM and Ag, the oTb doping increases the FF from 0.70 to 0.82. These results show the potential of the oTb as an n-dopant in the applications of perovskite solar cells.
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Keywords
perovskite solar cells
n-doping
biguanide
fill factor (FF)
electron transporting layer
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Corresponding Author(s):
Yinhua ZHOU
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Just Accepted Date: 12 September 2018
Online First Date: 30 November 2018
Issue Date: 21 December 2018
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