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Nonideal double-slope effect in organic field-effect transistors |
Ming-Chao Xiao1,2, Jie Liu2, Yuan-Yuan Hu3(), Shuai Wang1(), Lang Jiang2() |
1. Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China 2. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China 3. Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China |
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Abstract With the development of device engineering and molecular design, organic field effect transistors (OFETs) with high mobility over 10 cm2·V−1·s−1 have been reported. However, the nonideal doubleslope effect has been frequently observed in some of these OFETs, which makes it difficult to extract the intrinsic mobility OFETs accurately, impeding the further application of them. In this review, the origin of the nonideal double-slope effect has been discussed thoroughly, with affecting factors such as contact resistance, charge trapping, disorder effects and coulombic interactions considered. According to these discussions and the understanding of the mechanism behind double-slope effect, several strategies have been proposed to realize ideal OFETs, such as doping, molecular engineering, charge trapping reduction, and contact engineering. After that, some novel devices based on the nonideal double-slope behaviors have been also introduced.
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Keywords
organic field effect transistors
nonideal double-slope effect
mobility
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Corresponding Author(s):
Yuan-Yuan Hu,Shuai Wang,Lang Jiang
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Just Accepted Date: 08 September 2020
Issue Date: 27 October 2020
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