The unique carrier mobility of Janus MoSSe/GaN heterostructures

doi:10.1007/s11467-020-1021-1

Front. Phys.

2021, Vol. 16

Issue (3) : 33501 https://doi.org/10.1007/s11467-020-1021-1

RESEARCH ARTICLE

The unique carrier mobility of Janus MoSSe/GaN heterostructures

Wen-Jin Yin¹, Xiao-Long Zeng¹, Bo Wen², Qing-Xia Ge¹, Ying Xu¹, Gilberto Teobaldi^3,^4,⁵, Li-Min Liu²(

)

¹. 1School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
². 2School of Physics, Beihang University, Beijing 100083, China
³. 3Scientific Computing Department, STFC UKRI, Rutherford Appleton Laboratory, Harwell Campus, OX11 0QX Didcot, United Kingdom
⁴. 4Stephenson Institute for Renewable Energy, Department of Chemistry, University of Liverpool, L69 3BX Liverpool, United Kingdom
⁵. 5School of Chemistry, University of Southampton, Highfield, SO17 1BJ Southampton, United Kingdom

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Abstract

Heterostructure is an effective approach in modulating the physical and chemical behavior of materials. Here, the first-principles calculations were carried out to explore the structural, electronic, and carrier mobility properties of Janus MoSSe/GaN heterostructures. This heterostructure exhibits a superior high carrier mobility of 281.28 cm²·V⁻¹·s⁻¹ for electron carrier and 3951.2 cm²·V⁻¹·s⁻¹ for hole carrier. Particularly, the magnitude of the carrier mobility can be further tuned by Janus structure and stacking modes of the heterostructure. It is revealed that the equivalent mass and elastic moduli strongly affect the carrier mobility of the heterostructure, while the deformation potential contributes to the different carrier mobility for electron and hole of the heterostructure. These results suggest that the Janus MoSSe/GaN heterostructures have many potential applications for the unique carrier mobility.

Keywords Janus heterostructure carrier mobility first-principles calculation

Corresponding Author(s): Li-Min Liu

Just Accepted Date: 20 October 2020 Issue Date: 19 November 2020

Cite this article:

Wen-Jin Yin,Xiao-Long Zeng,Bo Wen, et al. The unique carrier mobility of Janus MoSSe/GaN heterostructures[J]. Front. Phys. , 2021, 16(3): 33501.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-020-1021-1
https://academic.hep.com.cn/fop/EN/Y2021/V16/I3/33501

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