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Frontiers of Physics

ISSN 2095-0462

ISSN 2095-0470(Online)

CN 11-5994/O4

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Front. Phys.    2024, Vol. 19 Issue (6) : 63203    https://doi.org/10.1007/s11467-024-1419-2
Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array
Subaek Lee, Juri Kim, Sungjun Kim()
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
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Abstract

The emerging nonvolatile memory, three-dimensional vertical resistive random-access memory (VRRAM), inspired by the vertical NAND structure, has been proposed to replace NAND flash memory which has reached its integration limit. To improve the vertical ionic diffusion occurring in the conventional VRRAM structure, we propose a Pt/HfO2/TiO2/Ti self-aligned VRRAM with physically confined switching cells through sidewall thermal oxidation. We achieved stable bipolar switching, endurance (>104 cycles), and retention (>104 s) responses, and improved the interlayer leakage current issue through a distinctive self-aligned structure. Additionally, we elucidated the switching mechanism by analyzing current levels concerning ambient temperature. To utilize VRRAM for neuromorphic computing, the biological synaptic functions are emulated by applying pulse stimulation to the synaptic cell. The weight modulation of biological synapses is demonstrated based on potentiation, depression, spike-rate-dependent plasticity, and spike-timing-dependent plasticity. Additionally, we improve the pattern recognition rate by creating a linear conductance modulation with an incremental pulse train in pattern recognition simulations. The stable electrical characteristics and implementation of various synaptic functions demonstrate that self-aligned VRRAM is suitable for neuromorphic systems as a high-density synaptic device.
Keywords 3D integration      resistive switching      vertical RRAM      synaptic plasticity      self-aligned insulator     
Corresponding Author(s): Sungjun Kim   
Issue Date: 28 June 2024
 Cite this article:   
Subaek Lee,Juri Kim,Sungjun Kim. Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array[J]. Front. Phys. , 2024, 19(6): 63203.
 URL:  
https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1419-2
https://academic.hep.com.cn/fop/EN/Y2024/V19/I6/63203
Fig.1  (a) Three-dimensional (3D) schematic of vertical resistive random-access memory (VRRAM). (b) Schematic with self-aligned cell configured around a planar Ti electrode. (c) Transmission electron microscopy (TEM) image of VRRAM. (d) EDS line scan at the second layer.
Fig.2  XPS core level spectra of (a) Hf, (b) Ti, and (c) O 1s in HfO2 at etch level 1. O 1s in TiOx at etch levels (d) 10, (e) 15, and (f) 22.
Fig.3  (a) I?V characteristic, (b) endurance with pulse, and (c) retention in the first metal layer. (d) I?V characteristic, (e) endurance, and (f) Theme6 contentAck1 retention in the second metal layer.
Fig.4  Schematic of the leakage current in (a) conventional VRRAM and (b) self-aligned VRRAM. (c) Current level switching of M1 while M2 retains the HRS. (d) The threshold voltage distribution of M1 depends on the resistance state of M2.
Fig.5  Multilevel characteristics for (a) set and (b) reset processes. Multilevel retention in (c) LRS and (d) HRS.
Fig.6  (a) Schematic of the oxygen vacancy migration during the switching process. (b) Conduction mechanism fitting based on Schottky emission. (c) Variations of current levels in LRS and HRS as a function of the ambient temperature.
Fig.7  (a) Conceptual illustration of signal transmission in human brain synapses. (b) The conceptual structure of biological and artificial synapses. Excitatory postsynaptic current (EPSC) gain modulation relative to interval time at (c) potentiation and (d) depression. EPSC gain modulation compared with pulse amplitude in (e) potentiation and (f) depression.
Fig.8  (a) Prespike and postspike pulse schemes for spike-timing-dependent plasticity (STDP) measurements at Δt = 100 μs. (b) STDP results. (c) Activity-dependent synaptic plasticity (ADSP) behaviors of self-aligned VRRAM.
Fig.9  Potentiation and depression under (a) identical pulse and (b) incremental pulse scheme conditions for linear conductance modulation. (c) Training results of pattern recognition with incremental pulse modulation. (d) Pattern recognition test after training.
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