A decomposition approach to the design of a multiferroic memory bit

doi:10.1007/s11465-017-0446-x

Front. Mech. Eng.

2017, Vol. 12

Issue (2) : 215-223 https://doi.org/10.1007/s11465-017-0446-x

RESEARCH ARTICLE

A decomposition approach to the design of a multiferroic memory bit

Ruben ACEVEDO(

), Cheng-Yen LIANG, Gregory P. CARMAN, Abdon E. SEPULVEDA

Mechanical and Aerospace Engineering Department, University of California Los Angeles, Los Angeles, CA 90095-1597, USA

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Abstract

The objective of this paper is to present a methodology for the design of a memory bit to minimize the energy required to write data at the bit level. By straining a ferromagnetic nickel nano-dot by means of a piezoelectric substrate, its magnetization vector rotates between two stable states defined as a 1 and 0 for digital memory. The memory bit geometry, actuation mechanism and voltage control law were used as design variables. The approach used was to decompose the overall design process into simpler sub-problems whose structure can be exploited for a more efficient solution. This method minimizes the number of fully dynamic coupled finite element analyses required to converge to a near optimal design, thus decreasing the computational time for the design process. An in-plane sample design problem is presented to illustrate the advantages and flexibility of the procedure.

Keywords multiferroics nano memory piezoelectric optimization

Corresponding Author(s): Ruben ACEVEDO

Just Accepted Date: 03 May 2017 Online First Date: 26 May 2017 Issue Date: 19 June 2017

Cite this article:

Ruben ACEVEDO,Cheng-Yen LIANG,Gregory P. CARMAN, et al. A decomposition approach to the design of a multiferroic memory bit[J]. Front. Mech. Eng., 2017, 12(2): 215-223.

URL:

https://academic.hep.com.cn/fme/EN/10.1007/s11465-017-0446-x
https://academic.hep.com.cn/fme/EN/Y2017/V12/I2/215

Fig.1 The ferromagnetic/piezoelectric system with its schematic on the right indicating the design variables

Fig.2 Schematic of the total energy at different positions of y with and without strain applied to the system

Fig.3 Input voltage and energy required to rotate the magnetization vector vs. its respective electrode distance d

Fig.4 (a) Magnetization with no strain at State 1; (b) magnetization when the disk is strained in an intermediate state; (c) magnetization once strain is removed at State 0

Fig.5 Magnetization vector rotation q and voltage control law V_i(t)

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