Intermediate-band solar cells based on dilute alloys and quantum dots

doi:10.1007/s12200-011-0151-z

Front Optoelec Chin

0, Vol.

Issue () : 2-11 https://doi.org/10.1007/s12200-011-0151-z

REVIEW ARTICLE

Intermediate-band solar cells based on dilute alloys and quantum dots

Weiming WANG¹, Jun YANG^1,2(

), Xin ZHU³, Jamie PHILLIPS¹

1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA; 2. Philips Lumileds Lighting Company, San Jose, CA 95131, USA; 3. Haosolar Co., Yixing 214213, China

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Abstract

This paper describes our recent developments of intermediate-band solar cells, with a focus on the use of dilute alloys and nanostructured materials such as quantum dots (QDs). The concept of “full-spectrum” solar cells and their working mechanism with various material structures are first illustrated. A comprehensive review of ZnTe:O-based intermediate-band solar cells, including material growth, structural and chemical analysis, device modeling and testing, are presented. Finally, the progress and challenges of quantum-dot-based solar cells are discussed.

Keywords full-spectrum solar cell intermediate band dilute alloy quantum dot (QD)

Corresponding Author(s): YANG Jun,Email:junyang@umich.edu

Issue Date: 05 March 2011

Cite this article:

Weiming WANG,Jun YANG,Xin ZHU, et al. Intermediate-band solar cells based on dilute alloys and quantum dots[J]. Front Optoelec Chin, 0, (): 2-11.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-011-0151-z
https://academic.hep.com.cn/foe/EN/Y0/V/I/2

Fig.1 Schematic of optical transitions in intermediate band solar cells

Fig.2 Calculated energy band structure (a) and density of states (b) for zinc telluride alloying with oxygen (Three possible optical transitions are indicated in (a)) []

Fig.3 Absorption coefficients of ZnTe samples grown by MBE with oxygen plasma extracted from transmission measurement []

Fig.4 (a) Device cross-section schematics; (b) calculated band diagram of p-ZnTe:O/n-GaAs junction versus distance from the semiconductor surface []

Fig.5 Solar cell spectral response for ZnTe and ZnTe:O diodes []

Fig.6 Process of two photon absorption via IB

Fig.7 Experimental set-up for two-photon absorption measurement

Fig.8 Sub-bandgap response of a ZnTe:O solar cell with 0.09 cm device area shown by (a) current-voltage characteristics under 1550, 650, and 650+1550 nm excitation, (b) and for variable 1550 nm laser excitation and constant 650 nm excitation []

Fig.9 Solar cell current-voltage curves under AM1.5 conditions for ZnTe and ZnTeO diodes []

Tab.1 Theoretical values for ideal ZnTe and ZnTe:O diodes

Fig.10 Time resolved photoluminescence of ZnTe:O

Fig.11 Processes of electron recombination

Fig.12 Simulated carrier lifetimes in the IB and CB of ZnTe:O

Fig.13 Illustration of electron transitions from the valence band (VB) to conduction band (CB) via intermediate band (IB)

Fig.14 (a) AFM image of uncapped InAs metamorphic quantum dot layer; (b) room-temperature photoluminescence spectra of self-assembled InAs quantum dots incorporating two different InGaAs capping layers ( I—less indium composition with/or thinner thickness, II—more indium composition with/or thicker thickness)

Fig.15 Room-temperature photoluminescence spectra of self-assembled InGaAs quantum dots (top layer) and InAs quantum dots (bottom layer) on Si substrates

Fig.16 Absorption and photoluminescence characterization of PbSe colloidal quantum dots in different sizes (courtesy of Prof. Jian Xu, Pennsylvania State University)

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