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SnO/SnO2 heterojunction: an alternative candidate for sensing NO2 with fast response at room temperature |
Pengtao WANG1, Wanyin GE1(), Xiaohua JIA1, Jingtao HUANG2, Xinmeng ZHANG1, Jing LU1 |
1. School of Materials Science and Engineering, Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, Shaanxi University of Science and Technology, Xi’an 710021, China 2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China |
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Abstract The SnO2-based family is a traditional but important gas-sensitive material. However, the requirement for high working temperature limits its practical application. Much work has been done to explore ways to improve its gas-sensing performance at room temperature (RT). For this report, SnO2, SnO, and SnO/SnO2 heterojunction was successfully synthesized by a facile hydrothermal combined with subsequent calcination. Pure SnO2 requires a high operating temperature (145 °C), while SnO/SnO2 heterojunction exhibits an excellent performance for sensing NO2 at RT. Moreover, SnO/SnO2 exhibits a fast response, of 32 s, to 50 ppm NO2 at RT (27 °C), which is much faster than that of SnO (139 s). The superior sensing properties of SnO/SnO2 heterojunction are attributed to the unique hierarchical structures, large number of adsorption sites, and enhanced electron transport. Our results show that SnO/SnO2 heterojunction can be used as a promising high-performance NO2 sensitive material at RT.
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Keywords
SnO
SnO2
heterostructure
NO2
room temperature
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Corresponding Author(s):
Wanyin GE
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Issue Date: 28 July 2022
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