Engineering phonon thermal transport in few-layer PdSe<sub>2</sub>

doi:10.1007/s11467-023-1351-x

Front. Phys.

2024, Vol. 19

Issue (3) : 33203 https://doi.org/10.1007/s11467-023-1351-x

RESEARCH ARTICLE

Engineering phonon thermal transport in few-layer PdSe₂

Meilin Li, Huanhuan Sun, Jun Zhou, Yunshan Zhao(

)

Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China

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Abstract

Engineering phonon transport in low-dimensional materials has great significance not only for fundamental research, but also for thermal management applications of electric devices. However, due to the difficulties of micro and nano processing and characterization techniques, the work on tuning phonon transport at nanoscale are scarce. In this work, by introducing Ar⁺ plasma, we probed the phonon transport in two-dimensional (2D) layered semiconductor PdSe₂ under different defect concentrations. By using thermal bridge method, the thermal conductivity was measured to decrease by 50% after a certain Ar⁺ irradiation, which implied a possible phase transition. Moreover, Raman characterizations were performed to show that the Raman sensitive peaks of PdSe₂ was red-shifted and finally became disappeared with the increase of defect concentration. “Defect engineering” proves be a practical strategy in tuning the phonon thermal transport in low-dimensional materials, thus providing guidance for potential application in designing thermoelectric devices with various emerging materials.

Keywords phonon transport PdSe₂ defects thermal bridge method

Corresponding Author(s): Yunshan Zhao

About author:

Peng Lei and Charity Ngina Mwangi contributed equally to this work.

Just Accepted Date: 25 October 2023 Issue Date: 10 November 2023

Cite this article:

Meilin Li,Huanhuan Sun,Jun Zhou, et al. Engineering phonon thermal transport in few-layer PdSe₂[J]. Front. Phys. , 2024, 19(3): 33203.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1351-x
https://academic.hep.com.cn/fop/EN/Y2024/V19/I3/33203

Fig.1 (a) Optical image and (b) AFM image of PdSe₂. The thickness of the sample is 9.6 nm. (c) Optical image of transferred METS sample. Scale bars have been shown in each figure.

Fig.2 (a) Measured temperature-dependent resistance of heater and sensor and the calculated TCR. (b) Intrinsic thermal conductivity of PdSe₂. The extracted thermal conductivity ranges from (9.4±1.1) W·m^?1·K^?1 at room temperature.

Fig.3 The thermal conductance of PdSe₂ versus the Ar⁺ irradiation time at 300 K and 310 K. The thermal conductance of PdSe₂ decreases with an increase in the defect concentration.

Fig.4 The evolution of Raman sensitive peaks,

A g 1

and

A g 3

, for few layer PdSe₂ flakes under various irradiation doses.

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