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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

Postal Subscription Code 80-976

Front. Optoelectron.    2016, Vol. 9 Issue (2) : 151-159    https://doi.org/10.1007/s12200-016-0615-2
REVIEW ARTICLE
Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures
Yidong HUANG(), Kaiyu CUI, Fang LIU, Xue FENG, Wei ZHANG
State Key Lab of Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
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Abstract

This paper summarizes our research work on optoelectronic devices with nanostructures. It was indicated that by manipulating so called “general energy-bands” of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton (SPP), novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact (8 mm × 17.6 mm) footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hetero optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption (TSPA), and realized diffraction-limit-overcoming photolithography with resolution of ~1/11 of the exposure wavelength.

Keywords photonic crystal waveguide (PCWG)      optomechanical crystal      surface plasmon polariton (SPP)      two-surface-plasmon-absorption (TSPA)     
Corresponding Author(s): Yidong HUANG   
Just Accepted Date: 26 February 2016   Online First Date: 28 March 2016    Issue Date: 05 April 2016
 Cite this article:   
Yidong HUANG,Kaiyu CUI,Fang LIU, et al. Novel optoelectronic characteristics from manipulating general energy-bands by nanostructures[J]. Front. Optoelectron., 2016, 9(2): 151-159.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-016-0615-2
https://academic.hep.com.cn/foe/EN/Y2016/V9/I2/151
Fig.1  (a) Photonic energy-band structure of W1 PCWG; (b) photonic energy-band structure of W3 PCWG; (c) schematic of W1 PCWG; (d) schematic of W3 PCWG; (e) MSB (mini-gap) in photonic energy-band structure of W3 PCWG [6]
Fig.2  High quality W1 PCWG with air-bridge structure fabricated on silicon on insulator (SOI) substrate, where the period a = 420 nm, radius r = 124 nm, and the thickness of the silicon layer h = 200 nm. (a) is the total view and (b) is the view at the joint facet of the strip waveguide and the W1 PCWG [7]
Fig.3  (a) Measured transmission spectrum and group index of W1 PCWG with length of 480 mm. The gray line is transmission spectrum, black line with square symbol is group index [7]; (b) 10G microwave signal was delayed by the slow light effect at different wavelength. The time delay of 25 ps was obtained corresponding the group velocity is about c/15
Fig.4  (a) Scanning electron microscope (SEM) image of the fabricated double-slots PCWG; (b) photonic energy-band for transverse electric (TE)-mode of W3 PCWG with r/a = 0.28; (c) photonic energy-band for TE-mode of double-slots PCWG with r/a = 0.28, W0 = 1.2a, and Wslot = 0.2a [8]
Fig.5  Transmission spectra of W3 and double-slots PCWGs shown in Fig. 4 with a length of 50 lattice constants (L = 50a) [8]
Fig.6  (a) A W2 PCWG with an integrated titanium/aluminum microheater on its surface; (b) SEM image of the W2 PCWG [1]
Fig.7  (a) Photonic energy band of the W2 PCWG; (b) transmission spectra of the W2 PCWG under different heating power of the microheater; (c) extinction ratio of the W2 PCWG operating as an optical switch [1]
Fig.8  (a) Schematic of the one-dimensional hetero optomechanical crystal cavity; (b) SEM image of the top-view of the one dimensional hetero optomechanical crystal cavity with evanescent coupling waveguide after inductively coupled plasma (ICP) etching and electron beam (EB) removing process [10]
Fig.9  (a) Energy-band for photon with light line. The gray region represents the optical band-gap formed by P-I periodic structure. The red dash-line represents a cavity optical mode with frequency of 194 THz; (b) y-, z-symmetric mechanical band (energy-band for phonon). The gray region represents the mechanical band-gap formed by P-II periodic structure. The red dash-line represents a mechanical defect mode with frequency of 5.88 GHz [2]
Fig.10  (a) Normalized optical transmission spectrum of nanobeam cavity from the output of the evanescent coupling waveguide. The insert is the detail enlargement around the resonant frequency; (b) power spectrum density of the output optical signal [10]
Fig.11  Dispersion curve of light in vacuum (orange line) and SPP (green line), and the schematic mechanisms of TPA (blue) and TSPA (red) [3]
Fig.12  Experimental results of TSPA-IN under the exposure wavelength of 800 nm. (a) Surface profile of the resist pattern at average exposure power of 630 mW for 10 s; (b) surface profile of the resist pattern at average exposure power of 230 mW for 15 s. The insect is the atomic force microscope (AFM) photo of the resist pattern [3]
Fig.13  (a) Dispersion curves of the Au(1−a)-SiO2(a) cermet waveguide with different componentsa = 0, 10%, 20%, and 30%. Inset is a typical photoluminescence spectrum of the NP-Si. The shaded area corresponds to frequency domain between two half maxima; (b) dependence on SiO2 volume fraction a of resonance frequency wp (square) of the waveguide and high frequency dielectric constantε(circle) in Drude model of the metal-rich cermet. Inset is the schematic structure of a NP-Si layer with an Au (1−a)-SiO2(a) cermet waveguide [14]
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