Ge quantum dots light-emitting devices

doi:10.1007/s12200-012-0225-6

Front Optoelec

2012, Vol. 5

Issue (1) : 13-20 https://doi.org/10.1007/s12200-012-0225-6

REVIEW ARTICLE

Ge quantum dots light-emitting devices

Jinsong XIA¹(

), Takuya MARUIZUMI², Yasuhiro SHIRAKI²

1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China; 2. Advance Research Laboratories, Tokyo City University, Tokyo 158-0082, Japan

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Abstract

Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembled quantum dots emit light in the telecommunication wavelength range from 1.3 to 1.6 μm, for which Si is transparent. Ge self-assembled quantum dots were grown on silicon-on-insulator (SOI) by molecular beam epitaxy (MBE) in Stranski-Krastanov (S-K) mode. Then, electron beam lithography (EBL) was used to define the pattern of optical microcavities on the wafer. Finally, the pattern was transferred onto the Si/Ge slab by inductive coupled plasma (ICP) dry etching. Room-temperature photoluminescence (PL) was used to characterize the light-emitting properties of fabricated devices. The results showed that strong resonant light emission was observed in different optical microcavities. Significant enhancement of the intensity was obtained by the optical resonance. Based on the results of PL, we designed and fabricated current-injected light-emitting devices based on Ge self-assembled quantum dots in optical microcavities. Room-temperature resonant light emission was observed from Ge dots in a 3.8 μm microdisk resonator.

Keywords Si-based light-emitting devices Ge self-assembled quantum dots microcavities photonic crystal (PhC) microdisk

Corresponding Author(s): XIA Jinsong,Email:jinsongxia@gmail.com

Issue Date: 05 March 2012

Cite this article:

Jinsong XIA,Takuya MARUIZUMI,Yasuhiro SHIRAKI. Ge quantum dots light-emitting devices[J]. Front Optoelec, 2012, 5(1): 13-20.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0225-6
https://academic.hep.com.cn/foe/EN/Y2012/V5/I1/13

Fig.1 (a) AFM image of the Ge self-assembled quantum dots grown at 600°C by gas-source MBE; (b) PL spectrum of Ge self-assembled quantum dots at 40 K

Fig.2 (a) Reflectivity spectrum of planar cavity with Ge dots formed by SiGe/Si DBRs; (b) PL spectrum at 10 K from Ge quantum dots in cavity formed by SiGe/Si DBRs (The dashed line shows PL spectrum of reference sample without cavity. This figure is adopted from Ref. (15))

Fig.3 SEM image of fabricated microdisk resonator with Ge quantum dots

Fig.4 Room-temperature -PL spectra of a 4 μm micro disk with Ge dots. (a) Pumping laser spot is located at the disk edge. The reference spectrum at the bottom is recorded in PhC pattern-free region; (b) pumping laser spot is located at the disk center

Fig.5 SEM image of a fabricated microring resonator with Ge dots

Fig.6 Room-temperature -PL spectra of a 3 μm microring resonator with Ge quantum dots (The top black line is recorded in the microring. The bottom grey line is recorded in the pattern-free region under same condition)

Fig.7 (a) Schematic structure of PhC microcavity with Ge self-assembled quantum dots; (b) SEM image of fabricated T6 cavity

Fig.8 Room-temperature -PL spectrum from T6 microcavity. Pumping power is 0.2 mW at 514.5 nm. The reference spectrum at the bottom is recorded in PhC pattern-free region

Fig.9 Room-temperature -PL spectra from T6 microcavities with different lattice constants. The scale of wavelength axis decreased and moved to clearly show the relationship between the spectra. The vertical dashed lines show the alignment of four selected resonant peaks

Fig.10 (a) Schematic structure of Ge dots microdisk EL device; (b) SEM image of a 2.8 μm microdisk EL device; (c) EL spectrum of the device undercurrent of 0.1 mA recorded at room-temperature; (d) calculated resonant wavelengths of TM-polarized-like WGMs supported by microdisk. Insets show the mode profiles of WGMs

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