Analysis on annealing-induced stress of blind-via TSV using FEM

doi:10.1007/s11465-017-0457-7

Front. Mech. Eng.

2018, Vol. 13

Issue (3) : 401-410 https://doi.org/10.1007/s11465-017-0457-7

RESEARCH ARTICLE

Analysis on annealing-induced stress of blind-via TSV using FEM

Jie SHAO¹, Tielin SHI¹, Li DU¹, Lei SU², Xiangning LU³, Guanglan LIAO¹(

)

¹. State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
². School of Mechanical Engineering, Jiangnan University, Wuxi 214122, China
³. School of Mechanical and Electrical Engineering, Jiangsu Normal University, Xuzhou 221116, China

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Abstract

Copper-filled through silicon via (TSV) is a promising material owing to its application in high-density three-dimensional (3D) packaging. However, in TSV manufacturing, thermo-mechanical stress is induced during the annealing process, often causing reliability issues. In this paper, the finite element method is employed to investigate the impacts of via shape and SiO₂ liner uniformity on the thermo-mechanical properties of copper-filled blind-via TSV after annealing. Top interface stress analysis on the TSV structure shows that the curvature of via openings releases stress concentration that leads to ~60 MPa decrease of normal stresses, s_xx and s_yy, in copper and ~70 MPa decrease of s_xx in silicon. Meanwhile, the vertical interface analysis shows that annealing-induced stress at the SiO₂/Si interface depends heavily on SiO₂ uniformity. By increasing the thickness of SiO₂ linear, the stress at the vertical interface can be significantly reduced. Thus, process optimization to reduce the annealing-induced stress becomes feasible. The results of this study help us gain a better understanding of the thermo-mechanical behavior of the annealed TSV in 3D packaging.

Keywords through silicon via (TSV) annealing-induced stress interface stress plastic deformation finite element method

Corresponding Author(s): Guanglan LIAO

Just Accepted Date: 07 June 2017 Online First Date: 19 July 2017 Issue Date: 11 June 2018

Cite this article:

Jie SHAO,Tielin SHI,Li DU, et al. Analysis on annealing-induced stress of blind-via TSV using FEM[J]. Front. Mech. Eng., 2018, 13(3): 401-410.

URL:

https://academic.hep.com.cn/fme/EN/10.1007/s11465-017-0457-7
https://academic.hep.com.cn/fme/EN/Y2018/V13/I3/401

Fig.1 Sketch of the quarter-symmetric models. (a) Model A, ideal cylinder via; (b) Model B, via with curvature at the bottom and opening (The SiO₂ layer of the two structures is 0.6 mm, and the coordinate system is centered on the copper edge at the symmetry axis); (c) boundary conditions

Tab.1 Element numbers of the models with different via shapes

Tab.2 Material properties used for FEM

Fig.2 (a) The von Mises stress (unit: MPa); (b) structure deformation

Fig.3 Stress distributions of Models A and B (unit: MPa). (a) s_xx normal stress; (b) s_yy normal stress; (c) s_zz normal stress

Fig.4 Stresses in TSV structures of Models A and B. (a) Schematic diagram of the top interface and the paths; (b) s_xx; (c) s_yy; (d) s_zz

Fig.5 Plasticity evolution of (a) the ideal via in Model A and (b) the via with the curvature in Model B, where the plastic areas are indicated in red and the non-plastic regions are yellow; (c) effective plastic strain evolution at specified points. Points P_A and P_B are the critical points of the via with curvature, and Points P_C and P_D are those of the ideal via

Fig.6 (a) Sketch of the Cu/SiO₂ interface and SiO₂/Si interface for the four models with ideal cylinder vias (Models A, C-1, C-2 and C-3), where the interfaces are located on the xz plane. The normal stress components (b) s_xx, (c) s_yy, and (d) s_zz at the interfaces. The thickness of SiO₂ at the top/bottom varies from 0.6 mm/0.6 mm (Model A), 0.75 mm/0.75 mm (Model C-1), 0.8 mm/0.7 mm (Model C-2) to 0.9 mm/0.6 mm (Model C-3), where the thickness of SiO₂ in Models A and C-1 is uniform, and the thickness of SiO₂ in Models C-2 and C-3 is distributed linearly

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