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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

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Front. Optoelectron.    2015, Vol. 8 Issue (3) : 282-288    https://doi.org/10.1007/s12200-015-0529-4
RESEARCH ARTICLE
Building one-dimensional Bi2S3 nanorods as enhanced photoresponding materials for photodetectors
Taotao DING1,Yu TIAN2,Jiangnan DAI1,Changqing CHEN1,*()
1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2. School of Physics and Information Engineering, Jianghan University, Wuhan 430056, China
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Abstract

In this paper, Bi2S3 nanorods were successfully synthesized via a facile one-pot hydrothermal method and characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. Then the Bi2S3 nanorods were deposited on Au interdigital electrodes by dip-coating to fabricate photodetectors. The photoresponse properties using Bi2S3 nanorods as a representative system showed a significantly enhanced conductivity and the current-voltage (I-V) characteristic exhibited about ca. 2 orders of magnitude larger than the dark current. The response and decay time was estimated to be ~371.66 and 386 ms, respectively, indicating Bi2S3 may be an excellent candidate for high speed and high-sensitivity photoelectrical switches and light sensitive devices.
Keywords Bi2S3      nanorods      photoresponse property      photodetector     
Corresponding Author(s): Changqing CHEN   
Just Accepted Date: 04 August 2015   Online First Date: 21 August 2015    Issue Date: 18 September 2015
 Cite this article:   
Taotao DING,Yu TIAN,Jiangnan DAI, et al. Building one-dimensional Bi2S3 nanorods as enhanced photoresponding materials for photodetectors[J]. Front. Optoelectron., 2015, 8(3): 282-288.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-015-0529-4
https://academic.hep.com.cn/foe/EN/Y2015/V8/I3/282
Fig.1  (a) XRD pattern of the Bi2S3 nanorods. The pattern shown at bottom is the standard XRD card of Bi2S3 (JPCDS no. 17-0320); (b), (c) and (d) the full spectra, Bi 4f and S 2s region of the XPS spectrum of Bi2S3 nanorods, respectively
Fig.2  (a) and (b) typical SEM images of Bi2S3 nanorods; (c) and (d) TEM image and HRTEM image of Bi2S3 nanorods, respectively
Fig.3  Photoresponsive sensitivity of the Bi2S3 nanorods as a representative system was studied. (a) I-V characteristic of device in the dark and under simulated A M 1.5 illumination; (b) logarithmic plot of (a); (c) time dependence of current of Bi2S3 micro-flower at a bias of 5 V in the dark and under simulated A M 1 illumination; (d) enlarged portion of the 510-513 s and 661-664 s
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