Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE

doi:10.1007/s12200-016-0613-4

Front. Optoelectron.

2016, Vol. 9

Issue (2) : 318-322 https://doi.org/10.1007/s12200-016-0613-4

RESEARCH ARTICLE

Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE

Yanxiong E,Zhibiao HAO(

),Jiadong YU,Chao WU,Lai WANG,Bing XIONG,Jian WANG,Yanjun HAN,Changzheng SUN,Yi LUO

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

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Abstract

Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are grown by using plasma-assisted molecular beam epitaxy (PA-MBE) system. The InGaN quantum dots (QDs) are disk-like observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The diameter of QDs can be controlled by the growth conditions of nanowires (NWs), while the thickness of QDs can be controlled by the growth time of InGaN. Temperature-dependent photoluminescence (TDPL) measurements demonstrate that the PL peak of DINWs with small and uniform sizes shows a general red shift with increasing temperature. However, the PL peak of DINWs with non-uniform sizes shows an abnormal blue shift with increasing temperature, which is due to different internal quantum efficiencies of the DINWs with different sizes.

Keywords InGaN quantum dots (QDs) nanowires (NWs) photoluminescence (PL) molecular beam epitaxy (MBE)

Corresponding Author(s): Zhibiao HAO

Just Accepted Date: 22 February 2016 Online First Date: 29 March 2016 Issue Date: 05 April 2016

Cite this article:

Yanxiong E,Zhibiao HAO,Jiadong YU, et al. Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE[J]. Front. Optoelectron., 2016, 9(2): 318-322.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-016-0613-4
https://academic.hep.com.cn/foe/EN/Y2016/V9/I2/318

Fig.1 (a) Cross-sectional SEM image of as-grown InGaN/GaN DINWs; (b) HAADF-STEM image of a single InGaN/GaN DINW, the area with bright contrast represents the InGaN QD; (c) EDS results of a line scan along the red arrow in (b), the green curve for Ga counts and the red one for In counts

Fig.2 Distribution of NW diameter in (a) sample A and (b) sample B

Fig.3 (a) and (b) are TDPL spectra of samples A and B; (c) and (d) are the integral PL intensities and peak energies versus temperature for samples A and B

Fig.4 Low temperature PL spectrum of sample A fitted by two Gaussian peaks

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