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Frontiers of Physics

ISSN 2095-0462

ISSN 2095-0470(Online)

CN 11-5994/O4

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Front. Phys.    2019, Vol. 14 Issue (1) : 13601    https://doi.org/10.1007/s11467-018-0845-4
RESEARCH ARTICLE
Enhancing the thermoelectric performance of Bi2S3: A promising earth-abundant thermoelectric material
Ye Chen1, Dongyang Wang1, Yuling Zhou2, Qiantao Pang3, Jianwei Shao4, Guangtao Wang5, Jinfeng Wang5, Li-Dong Zhao1()
1. School of Materials Science and Engineering, Beihang University, Beijing 100191, China
2. AVIC SAC Commercial Aircraft Co. Ltd., Shenyang 110034, China
3. Liaoning Tieling Sales Branch, Petro China Co. Ltd., Tieling 112000, China
4. Shenyang Liming Areo-Engine Co. Ltd., Shenyang 110043, China
5. College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China
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Abstract

Recently, bismuth sulfide (Bi2S3) has attracted much attention in the thermoelectric community owing to its abundance, low cost, and advanced properties. However, its poor electrical transport properties have prevented Bi2S3 devices from realizing high thermoelectric performance. In this work, our motivation is to decrease the large electrical resistivity, which is recognized as the origin of the low ZT value in undoped Bi2S3. We combined melting and spark plasma sintering (SPS) in a continuous fabrication process to produce Bi2S3–xSex (x = 0, 0.09, 0.15, 0.21) and Bi2S2.85–ySe0.15Cly (y = 0.0015, 0.0045, 0.0075, 0.015, 0.03) samples. Our results show that Se alloying at S sites can narrow the band gap and activate intrinsic electron conduction, leading to a high power factor of ~2.0 μW·cm–1·K–2 at room temperature in Bi2S2.85S0.15, about 100 times higher than that of undoped Bi2S3. Moreover, our further introduction of Cl atoms into the S sites resulted in a second-stage optimization of carrier concentration and simultaneously reduced the lattice thermal conductivity, which contributed to a high ZT value of ~0.6 at 723 K for Bi2S2.835Se0.15Cl0.015. Our results indicate that high thermoelectric performance could be realized in Bi2S3 with earth-abundant and low-cost elements.
Keywords thermoelectric      Bi2S3      carrier concentration      lattice thermal conductivity     
Corresponding Author(s): Li-Dong Zhao   
Issue Date: 01 January 2019
 Cite this article:   
Ye Chen,Dongyang Wang,Yuling Zhou, et al. Enhancing the thermoelectric performance of Bi2S3: A promising earth-abundant thermoelectric material[J]. Front. Phys. , 2019, 14(1): 13601.
 URL:  
https://academic.hep.com.cn/fop/EN/10.1007/s11467-018-0845-4
https://academic.hep.com.cn/fop/EN/Y2019/V14/I1/13601
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