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Secondary plasmon resonance in graphene nanostructures
Yang Li, Hong Zhang, Da-Wei Yan, Hai-Feng Yin, Xin-Lu Cheng
Front. Phys. . 2015, 10 (1 ): 103101-.
https://doi.org/10.1007/s11467-014-0430-4
The plasmon characteristics of two graphene nanostructures are studied using time-dependent density functional theory (TDDFT). The absorption spectrum has two main bands, which result from π and σ + π plasmon resonances. At low energies, the Fourier transform of the induced charge density maps exhibits anomalous behavior, with a π phase change in the charge density maps in the plane of the graphene and those in the plane 0.3 ? from the graphene. The charge density fluctuations close to the plane of the graphene are much smaller than those above and beneath the graphene plane. However, this phenomenon disappears at higher energies. By analyzing the electronic properties, we may conclude that the restoring force for the plasmon in the plane of the graphene does not result from fixed positive ions, but rather the Coulomb interactions with the plasmonic oscillations away from the plane of the graphene, which extend in the surface-normal direction. The collective oscillation in the graphene plane results in a forced vibration. Accordingly, the low-energy plasmon in the graphene can be split into two components: a normal component, which corresponds to direct feedback of the external perturbation, and a secondary component, which corresponds to feedback of the Coulombic interaction with the normal component.
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Quasiparticle scattering interference in the renormalized Hubbard model
Shu-Hua Wang, Huai-Song Zhao, Feng Yuan
Front. Phys. . 2015, 10 (1 ): 107401-.
https://doi.org/10.1007/s11467-014-0446-9
In this paper, we study the quasiparticle scattering interference phenomenon in the presence of a single impurity within the renormalized Hubbard model. By calculating the energy and momentum dependence of the Fourier-transformed local density of states in the full Brillouin zone, we can qualitatively describe the main features of the quasiparticle scattering interference phenomenon in cuprate superconductors using a single point-like impurity. In particular, we show that with increasing energy, the position of the peak along the nodal ([0, 0] → [π, π ]) direction moves steadily to a large momentum region, while the position of the peak along the antinodal ([0, 0] → [π , 0]) direction moves toward the center of the Brillouin zone.
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Self-assembly of InAs quantum dots on GaAs(001)by molecular beam epitaxy
Ju Wu, Peng Jin
Front. Phys. . 2015, 10 (1 ): 108101-.
https://doi.org/10.1007/s11467-014-0422-4
Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2 -bonded to sp 3 - bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.
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Optimal aspect ratio of endocytosed spherocylindrical nanoparticle
Ying-Bing Chen, Yan-Hui Liu, Yan Zeng, Wei Mao, Lin Hu, Zong-Liang Mao, Hou-Qiang Xu
Front. Phys. . 2015, 10 (1 ): 108702-.
https://doi.org/10.1007/s11467-014-0444-y
Recent simulations have demonstrated that bioparticle size and shape modulate the process of endocytosis, and studies have provided more quantitative information that the endocytosis efficiency of spherocylindrical bioparticles is decided by its aspect ratio. At the same time, the dimensions of the receptor-ligand complex have strong effects on the size-dependent exclusion of proteins within the cellular environment. However, these earlier theoretical works including simulations did not consider the effects of ligand-receptor complex dimension on the endocytosis process. Thus, it is necessary to resolve the effects of ligand-receptor complex dimension and determine the optimal aspect ratio of spherocylindrical bioparticles in the process of endocytosis. Accordingly, we proposed a continuum elastic model, of which the results indicate that the aspect ratio depends on the ligand-receptor complex dimension and the radius of the spherocylindrical bioparticle. This model provides a phase diagram of the aspect ratio of endocytosed spherocylindrical bioparticles, the larger aspect ratio of which appears in the phase diagram with increasing ligand density, and highlights the bioparticle design.
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