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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

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Front Optoelec    2013, Vol. 6 Issue (1) : 108-113    https://doi.org/10.1007/s12200-012-0296-4
RESEARCH ARTICLE
Structure and microwave properties analysis of substrate removed GaAs/AlGaAs electro-optic modulator structure by finite element method
Kambiz ABEDI(), Habib VAHIDI
Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, Tehran 1983963113, Iran
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Abstract

In this paper, structure and microwave properties of a substrate removed GaAs/AlGaAs traveling wave electro-optic modulator structure were analyzed and simulated by using the finite element numerical technique for lower loss, simultaneous matching of optical and microwave velocities and impedance matching with 50 Ω. The effects of core layer thickness, claddings thicknesses, and width of the modulator on the microwave effective index nm were investigated, the characteristic impedance ZC, the microwave losses α, and the half-wave voltage-length product VπL were calculated. The results of the simulation suggest that the electrical bandwidth of 22 GHz and the optical bandwidth of 48 GHz can be obtained for fully matched, lower loss structure, which correspond to a 13 V·cm drive voltage.
Keywords electro-optic modulators      finite element method (FEM)      integrated optics      optical communication equipment     
Corresponding Author(s): ABEDI Kambiz,Email:K_Abedi@sbu.ac.ir   
Issue Date: 05 March 2013
 Cite this article:   
Kambiz ABEDI,Habib VAHIDI. Structure and microwave properties analysis of substrate removed GaAs/AlGaAs electro-optic modulator structure by finite element method[J]. Front Optoelec, 2013, 6(1): 108-113.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0296-4
https://academic.hep.com.cn/foe/EN/Y2013/V6/I1/108
Fig.1  Cross section of substrate removed GaAs/AlGaAs travelling wave electro-optic modulator
Fig.1  Cross section of substrate removed GaAs/AlGaAs travelling wave electro-optic modulator
Fig.1  Cross section of substrate removed GaAs/AlGaAs travelling wave electro-optic modulator
Fig.1  Cross section of substrate removed GaAs/AlGaAs travelling wave electro-optic modulator
Fig.2  Effects of increasing core thickness on (a) and ; (b) and
Fig.2  Effects of increasing core thickness on (a) and ; (b) and
Fig.2  Effects of increasing core thickness on (a) and ; (b) and
Fig.2  Effects of increasing core thickness on (a) and ; (b) and
Fig.3  Effects of increasing claddings thicknesses on (a) and ; (b) and
Fig.3  Effects of increasing claddings thicknesses on (a) and ; (b) and
Fig.3  Effects of increasing claddings thicknesses on (a) and ; (b) and
Fig.3  Effects of increasing claddings thicknesses on (a) and ; (b) and
Fig.4  Effects of increasing modulator width on (a) and ; (b) and
Fig.4  Effects of increasing modulator width on (a) and ; (b) and
Fig.4  Effects of increasing modulator width on (a) and ; (b) and
Fig.4  Effects of increasing modulator width on (a) and ; (b) and
Fig.5  Microwave loss vs. cladding thickness and modulator width
Fig.5  Microwave loss vs. cladding thickness and modulator width
Fig.5  Microwave loss vs. cladding thickness and modulator width
Fig.5  Microwave loss vs. cladding thickness and modulator width
dimensionvalue
core thickness/μm0.5
up-cladding thickness/μm1.9
down-cladding thickness/μm1.9
electrode thicknesses/μm2.0
modulator width/μm4.0
electrode width/μm4.0
sidewall Ta2O5 widths/μm25
modulator length/cm1
Tab.1  Dimensions of substrate removed travelling wave electro-optic modulator
Fig.6  Electrical and optical response of proposed modulator calculated from full-vectorial analysis
Fig.6  Electrical and optical response of proposed modulator calculated from full-vectorial analysis
Fig.6  Electrical and optical response of proposed modulator calculated from full-vectorial analysis
Fig.6  Electrical and optical response of proposed modulator calculated from full-vectorial analysis
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