Thermal resistance of high power LED on surface modified heat sink

doi:10.1007/s12200-013-0295-0

Front Optoelec

2013, Vol. 6

Issue (2) : 160-166 https://doi.org/10.1007/s12200-013-0295-0

RESEARCH ARTICLE

Thermal resistance of high power LED on surface modified heat sink

D. MUTHARASU(

), S. SHANMUGAN

Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), Pulau Penang 11800, Malaysia

Download: PDF(370 KB) HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract

For 3 W green light emitting diode (LED), the top surface of commercial heat sink was machined with two different shapes (hole and ‘V’ shaped) and the thermal performance was tested. The contact surface area of the heat sink was increased by machining process. The observed junction temperature (T_J) from transient cooling curve was high for ‘V’ shaped surface for all driving currents. Hole shaped surface of heat sink did not influence much on the T_J values. In addition, total thermal resistance (R_th-tot) was not affected by the hole shpaed surface compared to plain surface. Noticeable increases in T_J as well as R_th-tot were observed for ‘V’ shaped surface for all driving currents (100, 350 and 700 mA). The observed correlated color temperature (CCT) values were high for hole and ‘V’ shaped surfaces and the variation in CCT with respect to time was high for all surfaces measured at 700 mA. Increased lux for modified surface at high driving current (700 mA) was also observed. Very small variation in color rendering index (CRI) values could be observed.

Keywords light emitting diode (LED) surface modification transient analysis cumulated structure function optical properties

Corresponding Author(s): MUTHARASU D.,Email:shagan77in@yahoo.co.in

Issue Date: 05 June 2013

Cite this article:

D. MUTHARASU,S. SHANMUGAN. Thermal resistance of high power LED on surface modified heat sink[J]. Front Optoelec, 2013, 6(2): 160-166.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-013-0295-0
https://academic.hep.com.cn/foe/EN/Y2013/V6/I2/160

Fig.1 Photograph of ideal heat sink used (plain surface)

Fig.2 Schematic diagram of surface machined as (a) hole shape and (b) ‘V’ shape on top surface heat sink

Fig.3 (a) Schematic diagram of LED on heat sink and (b) measurement setup for thermal transient analysis of LED within still air chamber

Fig.4 -factor calibration curve for given 3 W green LED

Tab.1 Junction temperature and thermal resistance of plain and modified surface heat sinks from cumulative structure function

Fig.5 Transient cooling curve of 3 W green LED for plain and surface modified heat sink recorded at (a) 100 mA, (b) 350 mA and (c) 700 mA

Fig.6 Cumulative structure function of plain and surface modified heat sink recorded at (a) 100 mA, (b) 350 mA and (c) 700 mA

Fig.7 Variation of CCT values with respect to measuring time for 3 W green LED fixed on plain and surface modified heat sink

Fig.8 Change in lux of 3 W LED against measuring time at various driving current for plain and surface modified heat sink

1	Alan M.Lighting: the progress & promise of LEDs. III–Vs Review , 2004, 17 (4): 39–41 doi: 10.1016/S0961-1290(04)00466-1,
2	Poppe A, MicReD D, Mentor G B, Lasance C J M. On the standardization of thermal characterization of LEDs. In: Proceedings of the 25th Annual IEEE Semiconductor Thermal Measurement and Management Symposium . 2009, 151–158 doi: 10.1109/STHERM.2009.4810757
3	Park J, Shin M, Lee C C, . Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser. Optics Letters: Wiley, 2004, , 29(22): 2656–2658
4	Yovanovich M M, Marotta E E. Thermal Spreading and Contact Resistances. New Jersey: Wiley, 2003, 261–395
5	Krishna Reddy G V, Chikkanna N, Uma Maheswar Gowd B. Experimental evaluation of thermal resistance of composites. International Journal of Recent Technology and Engineering , 2012, 1(2): 16–21
6	Lyeo H, Cahill D G. Thermal conductance of interfaces between highly dissimilar materials. Physical Review B , 2006, 73(14): 144301
7	Fletcher L S. A review of thermal enhancement techniqeus for electronic systems. IEEE Transations on components, Hybrids and Manufacturing technology , 1990, 13(4): 1012–1021 doi: 10.1109/33.62543
8	Prasher R. Thermal interface materials: historical perspective, status, and future directions. Proceedings of the IEEE , 2006, 94(8): 1571–1586 doi: 10.1109/JPROC.2006.879796
9	Vermeersch B, De Mey G. Influence of thermal contact resistance on thermal impedance of microelectronic structures. Microelectronics and Reliability , 2007, 47(8): 1233–1238 doi: 10.1016/j.microrel.2006.09.020
10	Joint Electron Device Engineering Council (JEDEC). Transient dual interface test method for the measurement of the thermal resistance junction to case semiconductor devices with heat flow through a single path. JESD51-14, 2010
11	Alexandre V. Fall with linear drag and Wien’s displacement law: approximate solution and Lambert function. European Journal of Physics , 2012, 33(4): 751–755 doi: 10.1088/0143-0807/33/4/751
12	Chhajed S, Xi Y, Gessmann T, Xi J Q, Shah J M, Kim J K, Schubert E F. Junction temperature in light-emitting diodes assessed by different method. In: Proceedings of SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX . 2005, 16–24

[1]	Sakhawat HUSSAIN, Tasnim ZERIN, Md. Ashik KHAN. Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AlGaN light emitting diode[J]. Front. Optoelectron., 2017, 10(4): 370-377.
[2]	Weichong TANG, Zili ZHANG, Ke XIAO, Changchun ZHAO, Zhiyuan ZHENG. Terahertz frequency characterization of anisotropic structure of tourmaline[J]. Front. Optoelectron., 2017, 10(4): 409-413.
[3]	Qingsong LEI,Jiang LI. High conductive and transparent Al doped ZnO films for a-SiGe:H thin film solar cells[J]. Front. Optoelectron., 2015, 8(3): 298-305.
[4]	Mingzhang DENG,Weina SHI,Chen ZHAO,Bingbing CHEN,Yan SHEN. ITO surface modification for inverted organic photovoltaics[J]. Front. Optoelectron., 2015, 8(3): 269-273.
[5]	Xiewei ZHONG,Shenxia TAN,Xiang WEN,Dan ZHU. Effect of light beam on measurements of reflectance and transmittance of turbid media with integrating sphere: Monte Carlo simulation[J]. Front. Optoelectron., 2015, 8(2): 203-211.
[6]	Lai WANG,Wenbin LV,Zhibiao HAO,Yi LUO. Recent progresses on InGaN quantum dot light-emitting diodes[J]. Front. Optoelectron., 2014, 7(3): 293-299.
[7]	S. W. Ricky LEE, Rong ZHANG, K. CHEN, Jeffery C. C. LO. Emerging trend for LED wafer level packaging[J]. Front Optoelec, 2012, 5(2): 119-126.
[8]	Jiajie TAN, Kecheng YANG, Min XIA. Adaptive equalization for high speed optical MIMO wireless communications using white LED[J]. Front Optoelec Chin, 2011, 4(4): 454-461.
[9]	Minghui DENG, Shuqing HUANG, Zhexun YU, Dongmei LI, Yanhong LUO, Yubai BAI, Qingbo MENG. Enhanced electron injection/transportation by surface states increment in mesoporous TiO₂ dye-sensitized solar cells[J]. Front Optoelec Chin, 2011, 4(1): 65-71.
[10]	Cao MIAO, Hai LU, Dunjun CHEN, Rong ZHANG, Youdou ZHENG. InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices[J]. Front Optoelec Chin, 2009, 2(4): 442-445.

Viewed

Full text

Abstract

Cited

Shared

Discussed