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Frontiers of Physics

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Front. Phys.    2018, Vol. 13 Issue (4) : 138114    https://doi.org/10.1007/s11467-018-0795-x
REVIEW ARTICLE
Environmental engineering of transition metal dichalcogenide optoelectronics
Trevor LaMountain, Erik J. Lenferink, Yen-Jung Chen, Teodor K. Stanev, Nathaniel P. Stern()
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA
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Abstract

The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and manipulating the optical and electronic properties of these materials. In the specific case of monolayer transition metal dichalcogenide semiconductors, the direct band gap combined with the flexibility for manipulation of layers has made this class of materials promising for optoelectronics. Here, we review the properties of these layered materials and the various means of engineering these properties for optoelectronics. We summarize approaches for control that modify their structural and chemical environment, and we give particular detail on the integration of these materials into engineered optical fields to control their optical characteristics. This combination of controllability from their layered surface structure and photonic environment provide an expansive landscape for novel optoelectronic phenomena.
Keywords transition metal dichalcogenides      optoelectronics      van der Waals materials      heterostructures      excitons     
Corresponding Author(s): Nathaniel P. Stern   
Issue Date: 08 June 2018
 Cite this article:   
Trevor LaMountain,Erik J. Lenferink,Yen-Jung Chen, et al. Environmental engineering of transition metal dichalcogenide optoelectronics[J]. Front. Phys. , 2018, 13(4): 138114.
 URL:  
https://academic.hep.com.cn/fop/EN/10.1007/s11467-018-0795-x
https://academic.hep.com.cn/fop/EN/Y2018/V13/I4/138114
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