Transition metal dichalcogenides (TMDCs) heterostructures: Optoelectric properties

doi:10.1007/s11467-022-1176-z

Front. Phys.

2022, Vol. 17

Issue (4) : 43202 https://doi.org/10.1007/s11467-022-1176-z

TOPICAL REVIEW

Transition metal dichalcogenides (TMDCs) heterostructures: Optoelectric properties

Rui Yang, Jianuo Fan, Mengtao Sun(

)

School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China

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Abstract

Transition metal dichalcogenides (TMDCs) have suitable and adjustable band gaps, high carrier mobility and yield. Layered TMDCs have attracted great attention due to the structure diversity, stable existence in normal temperature environment and the band gap corresponding to wavelength between infrared and visible region. The ultra-thin, flat, almost defect-free surface, excellent mechanical flexibility and chemical stability provide convenient conditions for the construction of different types of TMDCs heterojunctions. The optoelectric properties of heterojunctions based on TMDCs materials are summarized in this review. Special electronic band structures of TMDCs heterojunctions lead to excellent optoelectric properties. The emitter, p-n diodes, photodetectors and photosensitive devices based on TMDCs heterojunction materials show excellent performance. These devices provide a prototype for the design and development of future high-performance optoelectric devices.

Keywords transition metal dichalcogenides (TMDCs) heterostructures optoelectric properties

Corresponding Author(s): Mengtao Sun

Issue Date: 12 July 2022

Cite this article:

Rui Yang,Jianuo Fan,Mengtao Sun. Transition metal dichalcogenides (TMDCs) heterostructures: Optoelectric properties[J]. Front. Phys. , 2022, 17(4): 43202.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-022-1176-z
https://academic.hep.com.cn/fop/EN/Y2022/V17/I4/43202

Fig.1 Structure and energy bands of common two-dimensional materials (Graphene, BP, MoS₂ and h-BN) [51].

Fig.2 Energy band characteristics of different types of heterojunctions.

Fig.3 (a) Bands and DOS of vdW and lateral MoS₂/WS₂ heterojunctions. (b, c) The dielectric function and absorption of vdW and lateral MoS₂/WS₂ heterojunctions, respectively. Reproduced from Ref. [56].

Fig.4 (a, b) Transmission spectra of coupling between Ag disks and vdW and lateral MoS₂/WS₂ heterojunctions, respectively. Reproduced from Ref. [56].

Fig.5 (a) Pressure-dependent direct and indirect band-gap. (b) Pressure-dependent effective mass of hole and electron. (c) Pressure-dependent intrinsic carrier concentration of indirect and direct band gap. (d) Pressure-dependent absorption spectra and the charge distribution. Reproduced from Ref. [57].

Fig.6 (a) Optical microscopy characterization of the WSe₂. (b) The SEM image taken from WSe₂/MoS₂ heterojunction device. (c) The PL mapping results of the WSe₂/MoS₂ heterojunction. (d) The electrode structure diagram of the WSe₂/MoS₂ heterojunction. Reproduced from Ref. [41].

Fig.7 (a) PL spectra of ML WSe₂, BL WSe₂ and FL MoS₂. (b) The I_ds−V_ds curves of MoS₂ FET transistor. (c) The I_ds−V_ds curves of WSe₂ FET transistor. (d) Gate-tunable output features of the WSe₂/MoS₂ heterojunction device [41].

Fig.8 (a) photocurrent intensity map of WSe₂/MoS₂ heterojunction with 514 nm laser irradiation (V_ds and V_BG = 0 V). (b) I_ds−V_ds curves of WSe₂/MoS₂ heterojunction in dark and 514 nm laser irradiation, respectively. (c) The EL spectra of ML-WSe₂/MoS₂ heterojunction with different current. (d) The EL spectra of BL-WSe₂/MoS₂ heterojunction with different current. (e) The current-dependent EL strength of ML and BL WSe₂/MoS₂ heterojunction. (f) The explanation of the physical mechanism. Reproduced from Ref. [41].

Fig.9 (a) The structure of the MoTe₂/graphene phototransistor. (b) SEM figure of MoTe₂/graphene heterostructure and electrodes. (c) The surface potential profile from graphene to MoTe₂. (d) Band structure of MoTe₂ and graphene and their heterojunction. (e) Transfer characteristics of the heterostructure in dark and at laser irradiation. (f) photocurrent mapping. (g) Photocurrents of MoTe₂/graphene heterostructure and MoTe₂. (h) Time-dependent photocurrent of the MoTe₂/graphene heterostructure and MoTe₂. (i) V_G-dependent photocurrent with different laser power. (j) Relation of photocurrent and photoresponsivity to incident laser power at 980 nm. Reproduced from Ref. [47].

Fig.10 (a) Schematic figure of ReS₂/graphene heterostructure optoelectronic device. (b) SEM image of the heterostructure. (c) Raman and (d) PL spectra of ReS₂ and heterostructure. Reproduced from Ref. [62].

Fig.11 (a) Photocurrent intensities of the heterojunction with different incident laser power. (b) Responsivity of heterojunction device and ReS₂ device. (c) The drain voltage dependent photocurrent of heterojunction device and ReS₂ device. Reproduced from Ref. [62].

Fig.12 (a) KPFM image taken from graphene and the ReS₂ on graphene. (b) The electronic band structure. (c) Transfer curves of the ReS₂/graphene heterostructure under dark and illumination. Reproduced from Ref. [62].

Fig.13 (a) Photocurrent response time of ReS₂ and ReS₂/graphene heterostructure. (b) Photocurrent response time of ReS₂/graphene heterostructure with high time resolution. (c) Photocurrent response of the ReS₂ device. (d) Photocurrent taken from the heterojunction device at 110 or 330 K condition. Reproduced from Ref. [62].

Fig.14 (a) STEM image taken from PbI₂/WS₂ heterostructure. (b) STEM image taken from MAPbI₃/WS₂ heterostructure generated through inserting MAI. (c) PL spectra of heterostructure, separate perovskite and WS₂ layers. (d) Schematic of type II band alignment. Reproduced from Ref. [71].

Fig.15 (a) The schematic and the optical micrograph of the structure. (b) I−V characteristics of the heterostructure photodetector in dark and different power laser conditions. (c) V_g-dependent photocurrent. (d) Time-resolved I_drain under dark and laser conditions. Reproduced from Ref. [71].

Fig.16 (a) The model of graphene/WSe₂/h-BN/graphene heterostructure with an AFM tip. (b) The operating mechanism of the heterostructure device. (c, d) The optical microscope and AFM image taken from heterostructure, respectively. Reproduced from Ref. [78].

Fig.17 (a) EL intensity map of the heterostructure. (b) The V_Bais-dependent Current before and after strain. (c) EL spectra of sites 1−7. (d) The second-order correlation function g⁽²⁾(

τ)

of sites 1, 2, and 3. (e) V_Bias-dependent EL spectrum. (f) V_Bais-dependent EL peak intensity. (g) High-resolution EL spectrum. Reproduced from Ref. [78].

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