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Covering α-Fe2O3 protection layer on the surface of p-Si micropillar array for enhanced photoelectrochemical performance |
Jing Gu, Hongtao Yu, Xie Quan(), Shuo Chen |
Key Laboratory of Industrial Ecology and Environmental Engineering (Ministry of Education), School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024, China |
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Abstract SiMP/α-Fe2O3 improved photoeletrochemical stability of Si. Optical absorption and photocurrent density of SiMP/α-Fe2O3 improved 2 and 4 times. Enhanced photogenerated charge separation derived from built-in electric field. Few papers with respect to the α-Fe2O3-covering-Si photocathode had been published.
![]() The spontaneous oxidation process of pristine silicon (Si) limits its application as photocatalyst or electrode in aqueous solution or moist air. Covering a protection layer on Si surface is an effective approach to overcome this disadvantage. In this paper, α-Fe2O3 is demonstrated to be an excellent alternative as a protection material. α-Fe2O3 layer was deposited around each p-type Si micropillar (SiMP) in well-ordered array by chemical bath deposition method. The diameter of SiMP was 5 mm and the thickness of α-Fe2O3 layer was about 20 nm. The photoeletrochemical stability of SiMP/α-Fe2O3 was proved by 10 circles cyclic voltammetry testing. Compared with SiMP, its optical absorption and photocurrent density improved 2 times and 4 times, respectively, and its onset potential for hydrogen evolution moved positively about 0.4 V. These improved performances could be ascribed to the enhanced photogenerated-charge-separation efficiency deriving from built-in electric field at the interface between Si and α-Fe2O3. The above results show an effective strategy to utilize Si material as photocatalyst or electrode in aqueous solution or moist air.
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Keywords
Si
α-Fe2O3
Photoelectrochemistry
Photogenerated charge separation
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Corresponding Author(s):
Xie Quan
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Issue Date: 16 June 2017
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