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Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology |
Xianjie LI1( ), Yonglin ZHAO1, Daomin CAI1, Qingming ZENG1, Yunzhang PU1, Yana GUO1, Zhigong WANG2, Rong WANG3, Ming QI3, Xiaojie CHEN3, Anhuai XU3 |
| 1. 13th Institute of China Electronic Technology Group Corporation; 2. Institute of RF&OEICs, Southeast University; 3. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences |
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Abstract The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/InGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/InGaAs heterojunction bipolar transistor (HBT) process. The InP/InGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 A/W at λ = 1.55 μm, a dark current less than 10 nA at a bias of -5 V and a -3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 223-1 pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 10-9 at 2.5 Gbit/s is less than -15.2 dBm.
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| Keywords
InP/InGaAs heterojunction bipolar transistor (HBT)
PIN
photoreceiver
opto-electronic integrated circuit (OEIC)
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Corresponding Author(s):
LI Xianjie,Email:xianjie@tom.com
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Issue Date: 05 September 2009
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| 1 |
BitterM, BauknechtR, HunzikerW, . Monolithically integrated 40-Gb/s InP/InGaAs PIN/HBT optical receiver module. In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials, Davos . IEEE Press, 1999: 381–384
|
| 2 |
HuberD, BitterM, DülkM, . A 53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz. In: Proceedings of the 12th International Conference on Indium Phosphide and Related Materials, Williamsburg . IEEE Press, 2000: 325–328
|
| 3 |
MekonnenG G, BachH G, BelingA, . 80-Gb/s InP-based waveguide-integrated photoreceiver. IEEE Journal of Selected Topics in Quantum Electronics , 2005, 11(2): 356–360
doi: 10.1109/JSTQE.2005.846518
|
| 4 |
Gutierrez-AitkenA L, YangK, ZhangX, . 16-GHz bandwidth InAlAs-InGaAs monolithically integrated PIN/HBT photoreceiver. IEEE Photonics Technology Letters , 1995, 7(11): 1339–1341
doi: 10.1109/68.473491
|
| 5 |
AoJ P, LiuW J, LiX J, . Long wavelength monolithic integrated photoreceiver. Semiconductor Optoelectronics , 2002, 23(1): 26–28 (in Chinese)
|
| 6 |
LiX J, AoJ P, WangR, . An 850 nm wavelength monolithic integrated photoreceiver with a single-power- supplied transimpedance amplifier based on GaAs PHEMT technology. In: Proceedings of the 23rd IEEE Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Baltimore . IEEE Press, 2001: 65–69
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| 7 |
LiX J, CaiD M, ZhaoY L, . Design and process for self-aligned InP/InGaAs SHBT structure. Chinese Journal of Semiconductors , 2005, 26(z1): 136–139 (in Chinese)
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