|
|
Fracture behavior of HPHT synthetic diamond with micrometers metallic inclusions |
He-sheng LI1,2, Yong-xin QI1,2, Yuan-pei ZHANG1,2, Mu-sen LI1,2() |
1. Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan 250061, China; 2. Shandong Engineering Research Center for Superhard Materials, Zoucheng 273500, China |
|
|
Abstract The fracture behavior of the diamond single crystals with metallic inclusions was investigated in the present paper. Single diamond crystals with metallic inclusions were formed by a special process with high pressure and high temperature (HPHT). The inclusions trapped in the diamond were characterized mainly to be metallic carbide of (Fe,Ni)23C6 or Fe3C and solid solution of γ-(Fe,Ni) by transmission electronic microscopy (TEM). The grain size of the inclusions is about micrometers. The fracture characteristics of the diamond single crystals, after compression and heating, were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The fracture sections of the compressed and heated diamonds were found to be parallel to the (111) plane. The interface of the inclusions and diamond is deduced to be the key factor and the original region of the fracture formation. Mechanisms of the fracture behavior of the HPHT synthesized diamonds are discussed.
|
Keywords
synthetic diamond
metallic inclusions
fracture
microstructure
|
Corresponding Author(s):
LI Mu-sen,Email:msli@sdu.edu.cn
|
Issue Date: 05 June 2009
|
|
1 |
Ferro S. Synthesis of diamond. Journal of Material Chemistry , 2002, 12: 2843-2855 doi: 10.1039/b204143j
|
2 |
Queisser H J. Modern Crystallograph . Berlin: Springer-Verlag, 1984
|
3 |
Huggins C M, Cannon P. Diamond containing controllable impurity concentration. Nature , 1962, 120: 829-830 doi: 10.1038/194829a0
|
4 |
Pavel E. The nature of the metallic inclusions in synthetic diamond crystals synthesized at ~5.5 GPa in Fe-C system. Solid State Communications , 1990, 76(4): 531-533 doi: 10.1016/0038-1098(90)90664-W
|
5 |
Kaneko J, Yonezawa C, Kasugai Y, . Determination of metallic impurities in high-purity type a diamond grown by high-pressure and high-temperature synthesis using neutron activation analysis. Diamond and Related Materials , 2000, 9: 2019-2023 doi: 10.1016/S0925-9635(00)00357-5
|
6 |
Kupriyanov I N, Gusev V A, Borzdo Y M, . Photoluminescence study of annealed nickel- and nitrogen- containing synthetic diamond. Diamond and Related Materials , 1999, 8: 1301-1309 doi: 10.1016/S0925-9635(99)00122-3
|
7 |
Kanda H, Watanabe K. Distribution of nickel related luminescence centers in HPHT diamond. Diamond and Related Materials , 1999, 8: 1463-1469 doi: 10.1016/S0925-9635(99)00070-9
|
8 |
Jia X, Hayakawa S, Li W, . Cobalt impurities in synthetic diamond. Diamond and Related Materials , 1999, 8: 1895-1899 doi: 10.1016/S0925-9635(99)00164-8
|
9 |
Shimomura S, Kanda H, Nakezawa H. Observation of micro-inclusions in diamond by scanning X-ray analytical microscope. Diamond and Related Materials , 1997, 6: 1680-1682 doi: 10.1016/S0925-9635(07)00041-6
|
10 |
Isoya J, Kanda H, Norris J R, . Fourier-transform and continuous-wave EPR studies of nickel in synthetic diamond: Site and spin multiplicity. Physics Review B , 1990, 41: 3905-3913 doi: 10.1103/PhysRevB.41.3905
|
11 |
Collins A T. Spectroscopy of defects and transition metals in diamond. Diamond and Related Materials , 2000, 9: 417-423 doi: 10.1016/S0925-9635(99)00314-3
|
12 |
Langenhorst F, Poirier J P, Frost D J. TEM observations of microscopic inclusions in synthetic diamond. Journal of Materials Science , 2004, 39: 1865-1867 doi: 10.1023/B:JMSC.0000016205.14981.11
|
13 |
Yin L W, Zou Z D, Li M S, . Some inclusions and defects in a synthetic diamond single crystal. Journal of Crystal Growth , 2000, 218: 455-458 doi: 10.1016/S0022-0248(00)00562-5
|
14 |
Giardini A A, Tyding J E. Diamond synthesis: observations on the mechanism of formation. American Mineralogist , 1962, 47: 1393-1399
|
15 |
Yin L W, Li M S, Sun D S, . Transmission electron microscopic study of some inclusions in synthetic diamond crystals. Materials Letters , 2001, 48: 21-25 doi: 10.1016/S0167-577X(00)00274-3
|
16 |
Liu Y X, Xiao L M, Yin L W. Entrapment of inclusions in diamond crystals grown from Fe-Ni-C system. Journal of Materials Science and Technology , 2002, 18(2): 171-172
|
17 |
Zhang Y F, Zhang F Q, Chen G H. A study of the pressure-temperature conditions for diamond growth. Journal of Materials Research , 1994, 9: 2845-2849 doi: 10.1557/JMR.1994.2845
|
18 |
Yin L W, Li M S, Gong Z G, . Analysis of nanometer inclusions in high pressure synthesized diamond single crystals. Chemical Physics Letters , 2002, 355: 490-496 doi: 10.1016/S0009-2614(02)00282-8
|
19 |
Shterenberg L E, Slesarev V N, Korsunskaya I A, . The experimental study of the interaction between the melt, carbides and diamond in the iron-carbon system at high pressure. High Temperatures High Pressures , 1975, 7: 517-522
|
20 |
Watson J H P, Li Z, Hyde A M. Compressive strength of synthetic diamond grits containing metallic nanoparticles. Applied Physics Letters , 2000, 77(26): 4330-4331 doi: 10.1063/1.1334352
|
21 |
Xu B, Li M S, Cui J J, . An investigation of a thin metal film covering on HPHT as-grown diamond from Fe-Ni-C system. Materials Science and Engineering: A , 2005, 396: 352-359 doi: 10.1016/j.msea.2005.02.005
|
22 |
Field J E. The Properties of Natural and Synthetic Diamond. London: Academic Press, 1992, 473-514
|
23 |
Li J, Mao H K, Fei Y, . Compression of Fe3C to 30 GPa at room temperature. Physics Chemical Miner , 2002, 29: 166-169 doi: 10.1007/s00269-001-0224-4
|
24 |
Strong H M, Hanneman R E. Crystallization of diamond and graphite. Journal of Chemical Physics , 1967, 46(9): 3668-3676 doi: 10.1063/1.1841272
|
25 |
Anthony T R. Stresses generated by impurities in diamond. Diamond and Related Materials , 1995, 4: 1346-1352 doi: 10.1016/0925-9635(95)00317-7
|
26 |
Shulshenko A A, Varga L, Hidasi B. Strength and thermal resistance of synthetic diamonds. International Journal Refractory Metal and Hard Materials , 1992, 11(5): 285-294 doi: 10.1016/0263-4368(92)90040-9
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|