Moisture influence in emerging neuromorphic device

doi:10.1007/s11467-023-1272-8

Front. Phys.

2023, Vol. 18

Issue (5) : 53601 https://doi.org/10.1007/s11467-023-1272-8

VIEW & PERSPECTIVE

Moisture influence in emerging neuromorphic device

Wenhua Wang, Guangdong Zhou(

)

College of Artificial Intelligence, Southwest University, Chongqing 400715, China

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Abstract

Conduction filament formation, redox reaction, and mobile ion migration in solid electrolytes underpin the memristive devices, all of which are partially influenced or fully dominated by the moisture. The moisture-based physical-chemistry mechanism provides an electric tunable method to create enough dissociate conductance states for neuromorphic computing, but overconcentration moisture will corrode electrode and then causes device invalidation. This perspective goal is that surveys the moisture-dependency of dynamic at interfaces or/and switching function layer, clarifies the bottlenecks that the memristive device facing in terms of water molecule-related reaction, and gives the possible solutions.

Keywords memristor moisture redox reaction oxide interface engineering

Corresponding Author(s): Guangdong Zhou

Issue Date: 26 April 2023

Cite this article:

Wenhua Wang,Guangdong Zhou. Moisture influence in emerging neuromorphic device[J]. Front. Phys. , 2023, 18(5): 53601.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1272-8
https://academic.hep.com.cn/fop/EN/Y2023/V18/I5/53601

Fig.1 (a) Schematic diagram of the reaction of water molecules with oxygen vacancies at the surface and interface [35]. Copyright ? 2018, Wiley. (b) Schematic diagram of the distribution of surface oxygen vacancies (

V o s u r

) and subsurface oxygen vacancies (

V o s u b

) in oxides [39]. Copyright ? 2014, American Physical Society. (c) The reaction of water molecules with nanostructures leading to a decrease in electron concentration [33]. Copyright ? 2020, Nano Energy. (d) Switching of water molecules to modulate the valence state change of M under UV light.

M x +

M y +

and

H +

are represented by blue, cyan and white balls, top and bottom electrodes are represented by yellow and gray balls, respectively. a.u., arbitrary units [41]. Copyright ? 2019, Springer Nature.

Fig.2 (a) Schematic diagram of redox reactions in electrochemical metallization memories forming conductive paths.

M x +

and M are represented by cyan and blue balls, top and bottom electrodes are represented by blue and yellow balls, respectively. a.u., arbitrary units [27, 43]. Copyright ? 2021 and 2013, ACS Publications. (b) The evolution of the memristor from capacitive to memristor state [33]. Copyright ? 2020, Nano Energy. (c) Water molecules induce oxidation and reduction peaks in the memristor. (d) The time evolution of the discharge current after SET and RESET operation is shown. Inset: simplified equivalent circuit model of a ReRAM device [46, 48]. Copyright ? 2013, Springer Nature & Copyright ? 2022, Cell Press.

Fig.3 Schematic diagram of the role of moisture for memristor applications [31, 39, 49, 55, 56]. Moisture induced memristor evolution stage. Copyright ? 2020, Nano Energy; The water-based reaction in chip packaging. Copyright ? 2021, ACS publications; Effect of moisture on memristor in logic operations. Copyright ? 2019, the Royal Society of Chemistry; Water molecule assisted neuromorphic vision sensor system. Copyright ? 2019, Springer Nature; Preparation of self-powered memristor using the influence of water molecules. Copyright ? 2019, Nano Energy.

Fig.4 Issues, suggested measures and investigation of water molecules in memristor.

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