Preparation and optimization of freestanding GaN using low-temperature GaN layer

doi:10.1007/s11706-019-0466-z

Front. Mater. Sci.

2019, Vol. 13

Issue (3) : 314-322 https://doi.org/10.1007/s11706-019-0466-z

RESEARCH ARTICLE

Preparation and optimization of freestanding GaN using low-temperature GaN layer

Yuan TIAN^1,^2,³, Yongliang SHAO¹(

), Xiaopeng HAO¹, Yongzhong WU¹, Lei ZHANG¹, Yuanbin DAI¹, Qin HUO¹, Baoguo ZHANG¹, Haixiao HU¹

¹. State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China
². Key Lab of Advanced Transducers and Intelligent Control System (Ministry of Education), Taiyuan University of Technology, Taiyuan 030024, China
³. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China

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Abstract

In this work, a method to acquire freestanding GaN by using low temperature (LT)-GaN layer was put forward. To obtain porous structure and increase the crystallinity, LT-GaN layers were annealed at high temperature. The morphology of LT-GaN layers with different thickness and annealing temperature before and after annealing was analyzed. Comparison of GaN films using different LT-GaN layers was made to acquire optimal LT-GaN process. According to HRXRD and Raman results, GaN grown on 800 nm LT-GaN layer which was annealed at 1090 °C has good crystal quality and small stress. The GaN film was successfully separated from the substrate after cooling down. The self-separation mechanism of this method was discussed. Cross-sectional EBSD mapping measurements were carried out to investigate the effect of LT-buffer layer on improvement of crystal quality and stress relief. The optical property of the obtained freestanding GaN film was also determined by PL measurement.

Keywords GaN self-separation low-temperature annealing

Corresponding Author(s): Yongliang SHAO

Online First Date: 03 July 2019 Issue Date: 29 September 2019

Cite this article:

Yuan TIAN,Yongliang SHAO,Xiaopeng HAO, et al. Preparation and optimization of freestanding GaN using low-temperature GaN layer[J]. Front. Mater. Sci., 2019, 13(3): 314-322.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-019-0466-z
https://academic.hep.com.cn/foms/EN/Y2019/V13/I3/314

Fig.1 (a)(b)(c) Plan-view SEM images of the morphology of LT-GaN as a function of the LT-GaN thickness after annealing at 1090 °C. (d)(e)(f) Plan-view and (g)(h)(i) cross-section SEM images of the GaN film grown on LT-GaN with different thickness.

Fig.2 (a)(b)(c) Plan-view SEM images of the morphology of LT-GaN as a function of the LT-GaN annealing temperature with a thickness of 800 nm. (d)(e)(f) Plan-view and (g)(h)(i) cross-section SEM images of the GaN film grown on LT-GaN under different annealing temperatures.

Fig.3 The FWHM change trend of GaN film as a function of the LT-GaN thickness from (a) the symmetric (0 0 2) plane and (b) the asymmetric (1 0 2) plane. The FWHM change trend of GaN film as a function of the annealing temperature from (c) the symmetric (0 0 2) plane and (d) the asymmetric (1 0 2) plane.

Fig.4 Raman spectra of GaN films grown on annealed LT-GaN with different (a) thickness and (b) annealing temperature.

Fig.5 The FWHM of GaN film grown on the MOCVD-GaN layer and the annealed LT-GaN layer from (a) symmetric (0 0 2) plane and (b) asymmetric (1 0 2) plane.

Fig.6 Raman spectra of GaN films grown on the MOCVD-GaN layer and the annealed LT-GaN layer.

Fig.7 A photo of 2 inch freestanding GaN grown under the best process condition.

Fig.8 PL spectrum of the GaN film grown on LT-GaN which was annealed at 1090 °C with a thickness of 800 nm.

Fig.9 Cross-section SEM image of 200 μm GaN film grown on 800 nm LT-GaN annealed at 1090 °C.

Fig.10 (a) EBSD Kikuchi pattern, (b) pole figures and (c) texture component result detected in cross-sectional GaN.

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