A corona modulation device structure and mechanism based on perovskite quantum dots random laser pumped using an electron beam

doi:10.1007/s12200-020-1045-8

Front. Optoelectron.

2020, Vol. 13

Issue (3) : 291-302 https://doi.org/10.1007/s12200-020-1045-8

RESEARCH ARTICLE

A corona modulation device structure and mechanism based on perovskite quantum dots random laser pumped using an electron beam

Yan ZHU, Yining MU(

), Fanqi TANG, Peng DU, Hang REN

School of Science, Changchun University of Science and Technology, Changchun 130022, China

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Abstract

Although laser pumping using electron beam (EB) has high transient power output and easy modulation based on perovskite quantum dot (PQD) film, its lasing emitting direction is the same as the pumped EB’s direction. Thus, realizing the conventional direct device structure through the film lasing mechanism is extremely difficult. Therefore, using the random lasing principle, herein, we proposed a corona modulation device structure based on PQDs random laser pumped using an EB. We discussed and stimulated the optimized designed method of the device in terms of parameters of the electronic optical device and the utilization ratio of output power and its modulation extinction ratio, respectively. According to the simulation results, this type of device structure can effectively satisfy the new random lasing mechanism in terms of high-speed and high-power modulation.

Keywords corona modulation perovskite quantum dot (PQD) random laser electron beam (EB)

Corresponding Author(s): Yining MU

Just Accepted Date: 16 July 2020 Online First Date: 26 August 2020 Issue Date: 27 September 2020

Cite this article:

Yan ZHU,Yining MU,Fanqi TANG, et al. A corona modulation device structure and mechanism based on perovskite quantum dots random laser pumped using an electron beam[J]. Front. Optoelectron., 2020, 13(3): 291-302.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-020-1045-8
https://academic.hep.com.cn/foe/EN/Y2020/V13/I3/291

Fig.1 Crystal structure and thin film preparation process of CsPbBr₃

Fig.2 Lasing experiment of perovskite quantum dot (PQD) electron beam (EB) pumping

Fig.3 Scattering effect of EB in a 300 nm thickness PQD film. (a) 3 kV energy EB. (b) 5 kV energy EB. (c) 3 kV energy EB distribution within the PQD film. (d) 5 kV energy EB distribution within the PQD film

Fig.4 Photoluminescence (PL) spectra of CsPbBr₃ quantum dot thin films

Fig.5 Original EB pumping device

Fig.6 Lasing effect of PQDs EB pumping. CL, cathodoluminescence

Fig.7 Relationships between the thickness of PQD films and the external voltage

Fig.8 Corona-shaped EB device structure

Fig.9 Ring-shaped focusing chamber structure. L₁is the diameter of the focusing chamber; L₂is the length of the focusing chamber in region III; D₁ and D₂ determine the position of the electron source

Fig.10 Field distribution of focusing chamber. (a) Voltage scale. (b) L₁ = 5 mm. (c) L₁ = 15 mm. (d) L₁ = 25 mm. (e) L₁ = 35 mm. (f) L₁ = 45 mm. (g) L₁ = 50 mm

Fig.11 Field of view (FOV) matching process

Fig.12 EB’s utilization around the zero FOV

Fig.13 Electron source’s emission angle 2β on FOV matching

Fig.14 Working mechanism of modulated gate. (a) Initial model. (b) Isolation model. (c) Relay model. (d) Field scale

Fig.15 Concrete details of modulated gate

Fig.16 Influence modulated gate’s parameters on EB utilization. (a) X = 6 mm. (b) X = 8 mm. (c) X = 11 mm. (d) X = 13 mm

Fig.17 Influence modulated gate’s parameters on EB utilization. (a) X = 8 mm. (b) X = 9 mm. (c) X = 10 mm. (d) X = 11 mm. (e) X = 12 mm. (f) X = 13 mm

Fig.18 Relationship between U_bc and modulation ability

Fig.19 Static operation points for modulation

Fig.20 EB focusing process

Fig.21 EB focusing morphology

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