Overcoming doping bottleneck by using surfactant and strain

doi:10.1007/s11706-011-0148-y

Front Mater Sci

2011, Vol. 5

Issue (4) : 335-341 https://doi.org/10.1007/s11706-011-0148-y

REVIEW ARTICLE

Overcoming doping bottleneck by using surfactant and strain

Junyi ZHU(

), Su-Huai WEI

National Renewable Energy Laboratory, Golden, Colorado 80401, USA

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Abstract

Overcoming the doping bottleneck in semiconductors, especially in wide band gap semiconductors, has been a challenge in semiconductor physics for many years. In this paper, we review some recent progresses in enhancing doping by surfactant and strain. We show that surfactant and strain are two effective approaches to enhance dopant solubility in epitaxial growth. The surfactant can introduce an energy level deep inside the band gap, making the host compound less stable, thus lower the formation energy of the intentional dopant. The strain enhanced doping is based on the observation that dopant induces volume change in the host. If the external strain is in the same direction as the dopant induced volume change, the formation energy of the dopant is reduced. This effect can be used to tune doping sites, thus doping type, in a host. A hybrid method to both include strain and surfactant is proposed, which can be a promising general method to further enhance doping.

Keywords semiconductor surfactant strain doping band gap

Corresponding Author(s): ZHU Junyi,Email:junyi.zhu@nrel.gov

Issue Date: 05 December 2011

Cite this article:

Junyi ZHU,Su-Huai WEI. Overcoming doping bottleneck by using surfactant and strain[J]. Front Mater Sci, 2011, 5(4): 335-341.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-011-0148-y
https://academic.hep.com.cn/foms/EN/Y2011/V5/I4/335

Fig.2 Density of states for GaP(001) surfaces: no surfactant; only Sb as a surfactant; both Sb and H as surfactants. (Reproduced with permission from Ref. [], Copyright 2009 The American Physical Society)

Fig.3 Band diagrams showing the concept of enhancement of dopant solubility via epitaxial growth with appropriate surfactants. The key of the concept is to find the appropriate surfactants that generate high (low) levels that can transfer electrons (holes) to dopant acceptor (donor) levels in -type (-type) doping, thus significantly lowering the formation energy of dopants. Hollow and filled circles represent empty and filled electronic states, respectively. The arrows indicate the routes of charge transfer. (Reproduced with permission from Ref. [], Copyright 2009 The American Physical Society)

Fig.6 Doping energy difference of interstitial Li and substitutional Li doping of Li in ZnO under compressive hydrostatic strains. (Reproduced with permission from Ref. [], Copyright 2011 Elsevier Ltd.)

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