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Front. Optoelectron.    2014, Vol. 7 Issue (3) : 300-319    https://doi.org/10.1007/s12200-014-0435-1
REVIEW ARTICLE
Silicon hybrid nanoplasmonics for ultra-dense photonic integration
Xiaowei GUAN,Hao WU,Daoxin DAI()
State Key Laboratory for Modern Optical Instrumentation, Centre for Optical and Electromagnetic Research, Zhejiang Provincial Key Laboratory for Sensing Technologies, Zhejiang University, Hangzhou 310058, China
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Abstract

Recently hybrid plasmonic waveguides have been becoming very attractive as a promising candidate to realize next-generation ultra-dense photonic integrated circuits because of the ability to achieve nano-scale confinement of light and relatively long propagation distance. Furthermore, hybrid plasmonic waveguides also offer a platform to merge photonics and electronics so that one can realize ultra-small optoelectronic integrated circuits (OEICs) for high-speed signal generation, processing as well as detection. In this paper, we gave a review for the progresses on various hybrid plasmonic waveguides as well as ultrasmall functionality devices developed recently.
Keywords plasmonics      hybrid      silicon      nanowire      integration     
Corresponding Author(s): Daoxin DAI   
Online First Date: 31 July 2014    Issue Date: 09 September 2014
 Cite this article:   
Xiaowei GUAN,Hao WU,Daoxin DAI. Silicon hybrid nanoplasmonics for ultra-dense photonic integration[J]. Front. Optoelectron., 2014, 7(3): 300-319.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-014-0435-1
https://academic.hep.com.cn/foe/EN/Y2014/V7/I3/300
Fig.1  (a) Configuration for a hybrid slab waveguide; the electric field Ey in a hybrid slab waveguide when (b) tL = 500 nm; (c) tL = 150 nm; (d) tL = 50 nm
Fig.2  (a) Cross section of a hybrid plasmonic waveguide with a metal cap; (b) calculated field distribution for the major component Ey(x,y) of the quasi-TM fundamental mode of the hybrid plasmonic waveguide with wco = 200 nm and hslot = 50 nm. In this figure, the field distributions Ey(0, y) and Ey(x, 0) are also shown [21]
Ref.yearconfigurationtheory/experimentfeatures
[18]2007theorystructure: Si/SiO2/Agλ: 500~1200 nmFWHM: 400 nmLprop: 13.5 μm
[21]2009theorystructure: Ag/SiO2/ Siλ: 1550 nmWWG: 50 nmLprop: ~90 μm
[45]2010experimenstructure: Au-SiO2-Siλ: 1550 nmWWG: 250 nmLprop: 40 μm
[49]2010theorystructure: Ag-SiO2-Si-SiO2-Agλ: 1550 nmSi-core width: 50 nmAeff: 0.007 μm2Lprop: ~20 μm
[47]2011theorystructure: Ag-SiO2-Siλ: 1550 nmWWG: 70 nmloss: ~0.1 dB/μmAeff: 0.066 μm2
[51]2011theorystructure: Al-SiO2-Si-SiO2-Alλ: 1550 nmSi-core width: 300 nmLprop: ~31 μm
[53]2011experimenstructure: Al-SiO2-Si-SiO2-Alλ: 1550 nmSi-core width: 43-136 nmloss: 1.07-1.63 dB/μm
[54]2011experimentstructure: Cu-SiO2-Si-SiO2-Cuλ: 1550 nmSi-core width: 21-134 nmloss: 0.37-0.63 dB/μm
[55]2011experimentstructure: Ag-SiO2-Si-SiO2- Agλ: 1550 nmSi-core width: 300 nm;propagation loss: 1.6 dB/mm
[65]2012experimentstructure: Cu-SiO2-Siλ: 1550 nmwaveguide width: 160 nmloss: 0.122 dB/μm
[52]2012experimentstructure: Cu-SiOx-Si-SiOx-Cuλ: 1554 nm/1318 nmSi-core width: 160-220 nmloss: 0.2-0.3 dB/μm
[57]2013experimentstructure: Ag-air-Siλ: 1550 nmSi width: 400 nmloss: 0.14 dB/μm
[56]2013theorystructure: Si-Si:nc-Ag-Si-nc-Siλ: 1550 nmslot size: 150 nm × 200 nmloss: 3 × 10-4 dB/μm
[38]2013theoryStructure: Ag-Air-Siλ: 1550 nmAeff: 2.8 × 10-6 λ2Lprop: 2.6 μm
Tab.1  Reported silicon hybrid nanoplasmonic waveguides with rectangular structures
Fig.17  SEM picture for a sputtering silver surface
Fig.18  SEM picture for a silicon hybrid nanoplasmonic waveguide with dropped metal [109]
Fig.19  (a) Cross section of a hybrid plasmonic waveguide with an inverted metal rib; (b) field distribution in a hybrid plasmonic waveguide with the following parameters: nH = 3.455, nL = 1.445, nmetal = 0.1453+ 11.3587i, H = 300 nm, hrib = 250 nm, hslot = 10 nm, hm = 100 nm, and wco = 200 nm [47]
Fig.20  (a) Cross section of a hybrid plasmonic waveguide with double low-index slots; (b) field distribution for the major component Ex(x, y) of the quasi-TE fundamental mode when wco = 50 nm and wSiO2 = 10 nm. Here the field distributions Ex(x0, y) and Ex(x, y0) are also shown. Here x0 = wSi/2+ wSiO2/2 and y0 = hSi/2 [49]
Fig.21  Electrical field distribution Ey(x, y) for the cases of (a) R = 2 μm, (b) R = 1 μm, (c) R = 800 nm, (d) R = 500 nm. The other parameters are: hslot = 20 nm, wco = 400 nm [71]
Fig.22  Calculated bending loss for bent hybrid plasmonic waveguides (at 1550 nm). (a) hslot = 10 nm; (b) hslot = 20 nm; (c) hslot = 50 nm [71]
Fig.23  (a) 1 × 2 3 dB MMI power splitter; (b) 1 × 2 3 dB Y-branch power splitter; (c) 1 × 2 3 dB DC
Ref.yearstructureRextinctionratioQFSR
[71]2011800 nm30 dB220148 nm
[77]2011890 nm-648140 nm
[75]2011910 nm28 dB638143 nm
[65]20121.09 μm13.7 dB63106 nm
[76]2013522 nm12.4 dB110210 nm
Tab.2  Silicon hybrid nanoplasmonic waveguide resonators
Fig.29  Cross section of a silicon hybrid nanoplasmonic waveguide and the filed distributions for the TE0 and TM0 modes
Fig.30  Configuration (a) and light propagation (b) of a PBS with a MMI coupler on Si HPW platform [92]
Ref.gain mediumgainwavelength
[122]IR140 dye molecules (Sigma Aldrich)360 cm-1882 nm
[123]PMMA with Rhodamine 6G dye (R6G)420 cm-1594 nm
[124]Er-doped phosphate glass1 cm-11532 nm
[125]Er-doped Al2O30.3 cm-11530 nm
[126]sulfide (PbS) QDs150 cm-11525 nm
[127]GaInAsP1200 cm-11500 nm
[128]PbS semiconductor quantum dots1700 cm-11250 nm
[129]PMMA with PbS QDs17 cm-11160 nm
[130]dye solution-633 nm
[131]PbS QDs200 cm-1860 nm
[132]silicon nanocrystals100 cm-1800 nm
[133]MDMO-PPV:PSF90 cm-1600 nm
Tab.3  Gain reported in literatures [47]
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