Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

doi:10.1007/s12200-018-0851-8

Front. Optoelectron.

2018, Vol. 11

Issue (4) : 400-406 https://doi.org/10.1007/s12200-018-0851-8

RESEARCH ARTICLE

Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

Yanli ZHAO¹(

), Junjie TU¹, Jingjing XIANG¹, Ke WEN¹, Jing XU¹, Yang TIAN¹, Qiang LI¹, Yuchong TIAN¹, Runqi WANG¹, Wenyang LI¹, Mingwei GUO¹, Zhifeng LIU², Qi TANG²

¹. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
². Wuhan Aroptics-Tech Co., LTD, Wuhan 430074, China

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Abstract

Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50°C to 100°C. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.

Keywords optical communication separate absorption grading charge and multiplication avalanche photodiode (SAGCM APD) dead space effect temperature coefficient

Corresponding Author(s): Yanli ZHAO

Just Accepted Date: 16 October 2018 Online First Date: 13 December 2018 Issue Date: 21 December 2018

Cite this article:

Yanli ZHAO,Junjie TU,Jingjing XIANG, et al. Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Front. Optoelectron., 2018, 11(4): 400-406.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-018-0851-8
https://academic.hep.com.cn/foe/EN/Y2018/V11/I4/400

Fig.1 Schematic structure of a InP/InGaAs SAGCM APD as well as its corresponding electric field distribution

Fig.2 (a) Simulation of breakdown voltage on basis of the proposed temperature dependent dead space model, and the solid line denotes the linear fit; (b) experimental data and the linear fit of breakdown voltage vs temperature

Fig.3 (a) Simulation of 3 dB bandwidth vs multiplication on basis of the proposed temperature dependent dead space theory; (b) simulation of 3 dB bandwidth vs temperature on basis of the proposed temperature dependent dead space model, and the blue open circles denote the experimental data

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