Van der Waals layered ferroelectric CuInP<sub>2</sub>S<sub>6</sub>: Physical properties and device applications

doi:10.1007/s11467-020-0986-0

Front. Phys.

2021, Vol. 16

Issue (1) : 13301 https://doi.org/10.1007/s11467-020-0986-0

REVIEW ARTICLE

Van der Waals layered ferroelectric CuInP₂S₆: Physical properties and device applications

Shuang Zhou¹, Lu You²(

), Hailin Zhou², Yong Pu¹, Zhigang Gui³, Junling Wang³(

)

¹. New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
². Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
³. Department of Physics, Southern University of Science & Technology, Shenzhen 518055, China

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Abstract

Copper indium thiophosphate, CuInP₂S₆, has attracted much attention in recent years due to its van der Waals layered structure and robust ferroelectricity at room temperature. In this review, we aim to give an overview of the various properties of CuInP₂S₆, covering structural, ferroelectric, dielectric, piezoelectric and transport properties, as well as its potential applications. We also highlight the remaining questions and possible research directions related to this fascinating material and other compounds of the same family.

Keywords CuInP₂S₆ van der Waals ferroelectric phase transition ionic conduction piezoelectricity

Corresponding Author(s): Lu You,Junling Wang

Just Accepted Date: 18 August 2020 Issue Date: 10 October 2020

Cite this article:

Shuang Zhou,Lu You,Hailin Zhou, et al. Van der Waals layered ferroelectric CuInP₂S₆: Physical properties and device applications[J]. Front. Phys. , 2021, 16(1): 13301.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-020-0986-0
https://academic.hep.com.cn/fop/EN/Y2021/V16/I1/13301

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