Defect repairing in two-dimensional transition metal dichalcogenides

doi:10.1007/s11467-023-1290-6

Front. Phys.

2023, Vol. 18

Issue (5) : 53604 https://doi.org/10.1007/s11467-023-1290-6

TOPICAL REVIEW

Defect repairing in two-dimensional transition metal dichalcogenides

Shiyan Zeng, Fang Li, Chao Tan, Lei Yang, Zegao Wang(

)

College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China

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Abstract

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) have stimulated enormous research interest due to rich phase structure, high theoretical carrier mobility and layer-dependent bandgap. In view of the close correlation between defects and properties in 2D TMDCs, more attentions have been paid on the defect engineering in recent years, however the mechanism is still unclear. Herein, we review the critical progress of defect engineering and provide an extensive way to modulate the properties depressed by defects. To insight into the defect engineering, we firstly introduce two common kinds of defects during the growth progress of TMDCs and the possible distribution of energy levels those defects could induce. Then, various methods to improve point defects and grain boundaries during the period of growth are discussed intensively, with the assistance of which more large-area TMDCs films can be obtained. Considering the defects in TMDCs are inevitable regardless of concentration, we also highlight strategies to heal the defects after growth. Through dry methods or wet methods, the chalcogen vacancies can be repaired and thus, the performance of electronic device would be significantly enhanced. Finally, we propose the challenges and prospective for defect engineering in 2D TMDCs materials to support the optimization of device and lead them to wide applied fields.

Keywords defect repairing two-dimensional transition metal dichalcogenides

Corresponding Author(s): Zegao Wang

Issue Date: 31 May 2023

Cite this article:

Shiyan Zeng,Fang Li,Chao Tan, et al. Defect repairing in two-dimensional transition metal dichalcogenides[J]. Front. Phys. , 2023, 18(5): 53604.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1290-6
https://academic.hep.com.cn/fop/EN/Y2023/V18/I5/53604

Fig.1 The scope of this review.

Fig.2 (a) Top view and side view of point defects: Schottky vacancy, Frenkel defect, adatoms, interstitial atom and substitutional atom. (b) The diagram of edge defects. (c) The diagram of grain boundary: low-angle grain boundary and high-angle grain boundary. (d) The occupation of energy levels caused by different defects.

Fig.3 (a) Schematic illustration of the CVD setup for the NaX-assisted (X = Cl, Br, and I) MoS₂ growth, and Raman intensity mappings in two types of MoS₂ samples with NaBr and without salt [66]. (b) Large area HAADF-STEM images of MoSe₂, Mo_0.98W_0.02Se, and Mo_0.82W_0.18Se₂ monolayers from left to right, respectively (above). Enlarged HAADF-STEM images from the regions contained by dashed squares in corresponding images above after Lucy–Richardson deconvolution (below). The Se vacancies with one missing Se atoms are labeled by V, and those with two missing Se atoms are labeled by H [70]. (c) Optical images of MoS₂ grown on sapphire for 30 min with O₂ flow rate ranging from 0 to 5 sccm. The insets are AFM height images of MoS₂ grown on sapphire under different O₂ flow rates (0?2 sccm) [71]. (d, e) Typical Raman (d) and photoluminescence (e) spectra of as-grown MoS₂ with (red) and without (black) O₂ carrier gas, respectively [71].

Fig.4 (a) Schematics of the improved CVD synthesis for the high-throughput growth of submillimeter monolayer TMDC single crystals [72]. (b) SEM images of WS₂ crystals: on the substrate without self-stacking, on the self-stacked substrate for forming micro-reactors, and on the self-stacked substrate placed in the circumfluence CVD chamber, respectively. The insets show the typical WS₂ flakes correspondingly [72]. (c) Corresponding OM images and Raman spectra of MoS₂ synthesized using MoO₃ powder (above) and Mo foil (below) as precursors [79]. (d) Optical images of the monolayer WS₂ crystals that were grown from FWO₃, PTWO₃, AWO₃, and PTAWO₃ powders, respectively [80]. (e) Optical microscopy images and domain size distribution histogram of MoS₂ grown on c-plane sapphire and molten glass, respectively [81]. (f) Typical optical images of monolayer MoS₂ assisted grown by three different seeding promoters corresponding to PTAS, CuPc and CV, respectively [95]. (g) OM and AFM images of MoS₂ grown on SiO₂ without ?OH (left) and with ?OH (right), respectively [98].

Fig.5 (a) A 3D schematic plot of layered WS₂, with the sulfur atoms shown in yellow, tungsten atoms in gray and the N atoms in blue [100]. (b) Atomic structures of WS₂ without nitrogen plasma treatment (left) and with nitrogen plasma treatment (right) that were obtained via STEM. The insets are schematic diagram of sulfur atom (yellow round) and tungsten atom (brown round), as well as the corresponding SAED pattern [100]. (c) Schematic illustration of for hydrogen-doped MoS₂ [102]. (d) Band diagram showing the evolution of MoS₂ Fermi level: before hydrogenation, upon the first exposure to hydrogen, and after the complete hydrogenation, respectively [102]. (e) STM images of MoS₂/G/Au after annealing at different temperature [105].

Fig.6 (a) PL images of a MoS₂ monolayer before (above) and after treatment (below). Insets show optical micrographs [114]. (b) ADF-STEM images of five pristine 1L-MoS₂ samples (top panels) and the distribution maps (bottom panels) of the V _S (yellow dot) and V_S2 (red dot) defects measured from the corresponding ADF-STEM images. Note that a noticeable antisite defect, Mo_S2, is observed and is denoted by an arrow on the ADF-STEM images [111]. (c) The HAADF images and Z-contrast mapping in the areas marked with yellow rectangles before (left) and after (right) PSS-induced SVSH, reveal that the sulfur vacancies (1S) are healed spontaneously by the sulfur adatom clusters on MoS₂ surface through a PSS-induced hydrogenation process [118]. (d) Kinetics and transient states of the reaction between a single SV and MPS. There are two energy barriers, the first one (0.51 eV) is due to the S?H bond breaking, and the second one (0.22 eV) is due to S?C bond breaking. The inset shows the chemical structure of MPS [120]. (e) High-resolution aberration-corrected TEM images of as-exfoliated (left) and TS-treated (right) monolayer MoS₂ sample, showing the significant reduction of SV by MPS treatment. The SVs are highlighted by red arrows. The overlaid blue and yellow symbols mark the position of Mo and S atoms, respectively [120]. (f) Series of STM images of MoS₂ (0001) surface before and after adsorption of dodecanethiol molecules [123]. (g) Schematic of probable repairing processes [123].

Fig.7 (a) AFM characterization of partially laser modified WSe₂ flakes. For each of these flakes, the portion on the right corresponds to laser modified region. (b) Proposed photo-induced chemical changes to the MoSe₂ sample. (c) PL intensity mappings of an individual MoSe₂ flake before and after HBr treatment. (d) Optical microscopic images of MoSe₂ flakes on SiO₂/Si (upper panel) and those of the same flakes after the deposition of ZnPc by SDC methods (lower panel). The second column shows the thickness of the as-grown and functionalized MoSe₂ using the SDC method, analyzed by AFM. (e) PL intensity as a function of the excitation power for as-grown MoSe₂ and MoSe₂ + ZnPc.

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