High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped <italic>p</italic>-GaN

doi:10.1007/s12200-012-0256-z

Front Optoelec

2012, Vol. 5

Issue (2) : 127-132 https://doi.org/10.1007/s12200-012-0256-z

RESEARCH ARTICLE

High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

Sei-Min KIM, Seon-Ho JANG, Ja-Soon JANG(

)

Department of Electronic Engineering, LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University, Gyeongbuk 712–749, Korea

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Abstract

This work demonstrates high-performance and current crowding-free InGaN/GaN light-emitting diodes (LEDs) using an electrically-reverse-connected Schottky diode (SD) and an Mg-delta (δ) doped layer. Possible mechanism of carrier transport at the interface between transparent conducting electrode (TCE) and p-GaN with the δ-doped layer is also investigated. Results show that the LED with the SD and Mg delta (δ)-doping layer yields lower series resistance, higher output power, and lower reverse leakage current compared to normal LEDs. In addition, unlike the normal LED, there is no occurrence for the current crowding effect in the proposed LED even at high current density of 380 mA/cm². These remarkable behaviours clearly indicate that the use of the SD and δ-doping in the p-GaN region is very promising to achieve high-brightness and excellent-reliability GaN-based LEDs.

Keywords GaN light-emitting diode (LED) Schottky diode (SD) integration current crowding

Corresponding Author(s): JANG Ja-Soon,Email:jsjang@ynu.ac.kr

Issue Date: 05 June 2012

Cite this article:

Sei-Min KIM,Seon-Ho JANG,Ja-Soon JANG. High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN[J]. Front Optoelec, 2012, 5(2): 127-132.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0256-z
https://academic.hep.com.cn/foe/EN/Y2012/V5/I2/127

Fig.1 (a) and (b) schematic cross-sectional diagram and electrically equivalent circuit of normal LED and -SD LED; (c) possible current injection path ( = + ) of normal LED; and (d) that ( ≈ ) of -SD LED if the resistance of - SD is assumed to be much higher, during the forward operation

Fig.2 Current-voltage () characteristics for -GaN and -doped GaN contacts; and the inset shows a photograph of C-TLM patterns

Fig.3 Plots of experimental and theoretical values of as a function of 1/ using a metal/-/-GaN model. Dot line and solid line mean FE and TE fitting curves. TE is relatively dominant for -GaN contact, while FE is considerably dominant for -doped GaN contact

Fig.4 Current-voltage () characteristics for Al/-GaN SD, and the schematic cross-sectional diagram of the test pattern of the Schottky contact is shown in the inset

Tab.1 Summary of electrical data obtained from the normal and -SD LED

Fig.5 Output power-current () characteristics of normal LED and -SD LED

Fig.6 Optical emission photographs obtained from (a) normal and (b) -Schottky diode (SD) LED at 380 mA/cm

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