High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO<sub>3</sub>/SrTiO<sub>3</sub> (110) heterostructures

doi:10.1007/s11467-024-1395-6

Front. Phys.

2024, Vol. 19

Issue (5) : 53203 https://doi.org/10.1007/s11467-024-1395-6

High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO₃/SrTiO₃ (110) heterostructures

Zhao-Cai Wang¹, Zheng-Nan Li¹, Shuang-Shuang Li¹, Weiyao Zhao², Ren-Kui Zheng^1,³(

)

¹. School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
². Department of Materials Science & Engineering, Monash University, Clayton VIC 3800, Australia
³. School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China

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Abstract

High-quality antiferromagnetic Mott insulator thin films of LaTiO₃ (LTO) were epitaxially grown onto SrTiO₃ (STO) (110) substrates using the pulsed laser deposition. The LTO/STO heterostructures are not only highly conducting and ferromagnetic, but also show Kondo effect, Shubnikov‒de Haas (SdH) oscillations with a nonzero Berry phase of $π$ , and low-field hysteretic negative magnetoresistance (MR). Angle-dependent SdH oscillations and a calculation of the thickness of the interfacial conducting layer indicate the formation of a 4-nm high mobility two-dimensional electron gas (2DEG) layer at the interface. Moreover, an amazingly large low-field negative MR of ∼61.8% is observed at 1.8 K and 200 Oe, which is approximately one to two orders of magnitude larger than those observed in other spin-polarized 2DEG oxide systems. All these results demonstrate that the 2DEG is spin-polarized and the 4-nm interfacial layer is ferromagnetic, which are attributed to the presence of magnetic Ti³⁺ ions due to interfacial oxygen vacancies and the diffusion of La³⁺ ions into the STO substrate. The localized Ti³⁺ magnetic moments couple to high mobility itinerant electrons under magnetic fields, giving rise to the observed low-field MR. Our work demonstrates the great potential of antiferromagnetic titanate oxide interface for designing spin-polarized 2DEG and spintronic devices.

Keywords two-dimensional electron gas heterostructure spin polarization electronic transport interface

Corresponding Author(s): Ren-Kui Zheng

Issue Date: 09 April 2024

Cite this article:

Zhao-Cai Wang,Zheng-Nan Li,Shuang-Shuang Li, et al. High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO₃/SrTiO₃ (110) heterostructures[J]. Front. Phys. , 2024, 19(5): 53203.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1395-6
https://academic.hep.com.cn/fop/EN/Y2024/V19/I5/53203

Fig.1 (a) XRD

θ

−

2 θ

scan pattern for a 56-nm LTO (110) thin film. Inset:

φ

scan patterns of the LTO film and STO substrate. (b) A rocking curve taken on the LTO (110) diffraction peak. Insets: An X-ray RSM pattern and AFM image of the LTO film. (c) XRR pattern of the LTO film with theoretical fitting. Inset: AFM image of an as-received STO (110) substrate. (d) A TEM image of the LTO/STO heterostructure. (e) Left panel: A HAADF-STEM image taken from the interface region. Middle and right panels: EELS mapping of the La and Ti elements. (f) Schematic structure of a LTO (110) film on a STO (110) substrate. The red, green, and gray circles are the oxygen, strontium, and titanium atoms, respectively. Right panel: Schematic of the density of states at the interface of the LTO/STO structure with ferromagnetic state.

Fig.2 (a) Temperature dependence of the sheet resistance of the LTO/STO (red curve) and LTO/LSAT (blue curve) heterostructures in zero magnetic field. Inset: Magnified view of the resistance upturn at low temperatures. (b) Areal carrier density (

n H a l l

) and mobility (

μ H a l l

) derived from Hall measurements as a function of temperature. Inset: Hall resistance R_xy as a function of the magnetic field for the LTO/STO heterostructure, as measured at different fixed temperatures. (c) Normalized resistance R(T)/R(2 K) of the LTO/STO structure. Inset: Enlarged view. (d) Experimentally (open blue squares and green circles) and theoretically (red curve) scaled Kondo resistance [R_K(T/T_K)/R_K0]. Inset: Temperature dependence of the resistance of a bare STO substrate that has been treated with the same conditions as those for growing LTO films on STO (110) substrates.

Fig.3 (a) MR vs. B curves at fixed temperatures ranging from 1.8 to 20 K. (b) Oscillatory patterns obtained by subtracting a smoothed background. (c) The fast Fourier transform (FFT) spectra of the oscillatory patterns. (d) Temperature dependence of the normalized FFT amplitude at F = 40 T. (e) The Dingle plot of the

l n [Δ R s i n h (α T) / (4 R 0 α T)]

vs. the inverse field 1/B at 1.8 K. (f) The Landau fan diagram is plotted to illustrate the Berry phase.

Fig.4 (a) MR as a function of the magnetic field B for different θ angles at T = 1.8 K. Inset: schematic illustration of the direction of the magnetic field with respective to the normal of the film plane. (b) Second derivative of R_xx with respective to B (d²R_xx/dB²) plotted against 1/B. (c) d²R_xx/dB² plotted against 1/(Bcosθ).

Fig.5 (a) Out-of-plane MR of the LTO/STO heterostructure, as measured at different temperatures with the direction of the magnetic field perpendicular to the film plane. (b) In-plane MR of the LTO/STO heterostructure, as measured at different temperatures with the direction of the magnetic field parallel to the film plane and electric current. (c) MR vs. B curve at 1.8 K, with the direction of the magnetic field perpendicular to the film plane. (d) Out-of-plane and in-plane MR plotted against temperature for B = 0.05 T.

Fig.6 Temperature dependence of the resistance for (a) LTO/LSAT and (b) LTO/LAO heterostructures in zero magnetic field and a magnetic field of 14 T, and magnetic field dependence of MR at T = 2 K for (c) LTO/LSAT and (d) LTO/LAO heterostructures.

Fig.7 (a) Temperature dependence of the zero-field-cooled (ZFC) and field-cooled (FC) magnetization for the LTO/STO heterostructure, as measured with a magnetic field of 100 Oe applied perpendicular and parallel to the film plane, respectively. (b) Out-of-plane and in-plane magnetization vs. magnetic field at 1.8 K for a 56-nm LTO/STO heterostructure. (c) XPS spectra around the binding energy of Ti 2p for the LTO film grown on STO (110). (d) Out-of-plane and in-plane magnetization vs. magnetic field at 1.8 K for a 56-nm LTO/LSAT heterostructure. (e) Schematically illustration of the origin of the interfacial ferromagnetism in the LTO/STO (110) heterostructure.

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