Localized surface plasmon resonance enhanced photodetector: Physical model, enhanced mechanism and applications

doi:10.1007/s11467-024-1413-8

Front. Phys.

2024, Vol. 19

Issue (6) : 63501 https://doi.org/10.1007/s11467-024-1413-8

Localized surface plasmon resonance enhanced photodetector: Physical model, enhanced mechanism and applications

Jiangtong Su^1,³, Xiaoqi Hou^2,³, Ning Dai^1,^3,^4,⁵(

), Yang Li^1,^3,⁴(

)

¹. School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
². School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
³. University of Chinese Academy of Sciences, Beijing 100049, China
⁴. Research Institute of Intelligent Sensing, Zhejiang Lab, Hangzhou 311100, China
⁵. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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Abstract

Localized surface plasmon resonance (LSPR) is an intriguing phenomenon that can break diffraction limitations and exhibit excellent light-confinement abilities, making it an attractive strategy for enhancing the light absorption capabilities of photodetectors. However, the complex mechanism behind this enhancement is still plaguing researchers, especially for hot-electron injection process, which inhibits further optimization and development. A clear guideline for basic physical model, enhancement mechanism, material selection and architectural design for LSPR photodetector are still required. This review firstly describes the mainstream understanding of fundamental physical modes of LSPR and related enhancement mechanism for LSPR photodetectors. Then, the universal strategies for tuning the LSPR frequency are introduced. Besides, the state-of-the-art progress in the development of LSPR photodetectors is briefly summarized. Finally, we highlight the remaining challenges and issues needed to be resolved in the future research.

Keywords localized surface plasmon resonance photodetector plasmonic nanomaterials hot electron

Corresponding Author(s): Ning Dai,Yang Li

Issue Date: 28 June 2024

Cite this article:

Jiangtong Su,Xiaoqi Hou,Ning Dai, et al. Localized surface plasmon resonance enhanced photodetector: Physical model, enhanced mechanism and applications[J]. Front. Phys. , 2024, 19(6): 63501.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1413-8
https://academic.hep.com.cn/fop/EN/Y2024/V19/I6/63501

Fig.1 Schematic, enhancement mechanism and applications of LSPR.

Fig.2 (a) Schematic of the physical model of surface plasmon polaritons (SPPs) at the interface of two medias. The electromagnetic wave propagates along the x direction of the surface. These vectors (H_y2, E_x2) represent the direction of the electric and magnetic field. The orange area illustrates the field intensity distribution, which reveals that the field is focused around the surface and decays exponentially along the z direction. (b) Schematic of the physical model of LSPRs in nanoparticles. Reproduced from Ref. [48].

Fig.3 (a) Dispersion relations for propagating photon (dashed navy line), bulk plasmons (top left blue branch) and SPPs on a metal-vacuum interface (bottom right blue branch) [49]. (b) Prism coupling of SPPs: Kretschmann configuration. (c) Illustration of momentum mismatch in Kretschmann configuration. (d) Schematic of a homogeneous nanosphere in an electrostaic field. (e) Extinction spectrum calculated via Eq. (12) for a sliver sphere (black curve) and a silica sphere (gray curve) in air [50]. (a) Reproduced from Ref. [49]. (b?e) Reproduced from Ref. [50].

Fig.4 (a) Extinction spectra of silver nanoparticles of 20 difference diameters (from 6 nm to beyond 70 nm). And the peak shift rapidly to longer wavelength as the particles size increases. (b−d) Optical extinction spectrum of Au NPs (nanospheres, nanotriangles and nanocubes). (e) The calculated absorption spectrum of elongated ellipsoids with varying aspect R which is defined as A/B. A and B are the long axis and short axis separately. Inset shows the function of resonance maximum wavelength λ_max and aspect ratio R [63]. (f) Extinction cross section of a 20 nm Au NP in a non-absorbing media with the refractive index increasing from n_m,i = 1 to n_m,f = 2, calculated by Mie model [61]. (a) Reproduced from Ref. [59]. (b?d) Reproduced from Ref. [61]. (e) Reproduced from Ref. [63]. (f) Reproduced from Ref. [70].

Fig.5 (a) Fabrication process of Al nanoholes GaN UV photodetector. (b) Fabrication process of the broadband Ag-QNF absorber. (c) Fabrication process of Au-MoS₂ photodetector. (d) Fabrication process of Au NP array graphene SWIR photodetector. (a) Reproduced from Ref. [79]. (b) Reproduced from Ref. [80]. (c) Reproduced from Ref. [81]. (d) Reproduced from Ref. [82].

Fig.6 (a) UV-Vis-NIR absorption spectra of ITO NPs doped with 3%?10% Sn. (b) FTIR transmission spectrum of ZnO NC with varying In doping concentrations (from 1% to 8%). (c) Absorbance spectrum of Cu₂S nanorods. The stoichiometric Cu₂S nanorods (black line) without NIR LSPR absorbance. (d) The top part illustrates the photodoped process in ITO nanocrystals. The bottom is the absorbance spectrum of In₂O₃ and 9% Sn-doped In₂O₃ before and after photodoping. The arrow reveals photodoping concentration increases with increasing UV exposure. (e) Extinction spectra of P-In₂O₃ nanocrystals with P:In ratio from 0.05 to 0.6. (f) Absorption spectra of ZnO NCs with 20 equiv

C p 2 ∗ C o

. (a) Reproduced from Ref. [95]. (b) Reproduced from Ref. [94]. (c) Reproduced from Ref. [89]. (d) Reproduced from Ref. [98]. (e) Reproduced from Ref. [100]. (f) Reproduced from Ref. [101].

Fig.7 (a) Electric field enhancement distribution around a D = 20 nm Au NP irradiated at plasmon frequency (λ = 520 nm), a 75 nm outer radius/65 nm inner radius SiO₂/Au NS at plasmon frequency (λ = 863 nm) and a 10 nm × 41 nm Au NR. (b) PINEM images of two close-by silver particles for two polarizations. The particles are separated by 70 nm (edge-to-edge). (c) FDTD simulation of Au NP arrays on CsPbBr₃ layer in three planes. (a) Reproduced from Ref. [110]. (b) Reproduced from Ref. [111]. (c) Reproduced from Ref. [112].

Fig.8 (a) Two different decay mechanisms in during the surface plasmon. (b) Three steps in hot-electron injection process in a Schottky detector [120]. (c) Four steps in non-radiative decay process of surface plasmon. (d) Constant energy contours in metal (left)/barrier (right) region [121]. k_m is the hot electron momentum in the metal, Ω is the allowed maximum angle that still satisfied the conservation of momentum. (e) Band structure of a plasmonic metal−semiconductor Schottky junction. (f) Band structure of a plasmonic semiconductor−semiconductor Schottky junction. (g) Schematic of plasmon excitation process in Cu_2−xSe−CdSe system. (b) Reproduced from Ref. [120]. (c) Reproduced from Ref. [117]. (d) Reproduced from Ref. [134]. (e?g) Reproduced from Ref. [142].

Fig.9 (a) Plasmon-induced hot electron production in a silver nanoparticle of diameter D as a finite potential well of depth V₀ and radius to D/2. (b) Number of hot electrons generated per unit of time as a function of energy of incident photon for different carrier lifetime ranging from 0.05 to 1 ps. Top panel is the result for an Au NP D = 15 nm and bottom is for D = 20 nm. (c) FoM

N e (ε)

as the function of particle size for different carrier lifetime raging from 0.05 to 1 ps. Top panel is the result for ε = 0.2 ħω_p and bottom for ε = 0.5 ħω_p. (d) Hot-carrier energy and momentum-direction distribution in aluminum, silver, copper and gold spherical. Reproduced from Ref. [144].

Fig.10 (a) Scheme of localized surface plasmon resonance enhanced photodetector structure. Energy band diagrams of (b) metal−semiconductor−metal, (c) Schottky diode and (d) tunnel junction photodetectors.

Fig.11 (a) Responsivity spectrum of Ag-ZnO UV LSPR photodetector from 300 to 500 nm and structure. The buffer layer is ZnO and the substrate is sapphire. (b) Schematic of Au-ZnO UV LSPR photodetector with Pt electrode. (c) Responsivity spectrum of ZnO and Au-ZnO devices from 300 to 400 nm at 5 V. (d) Schematic of Ag NPs/ZnO nanowires (NW) @GaN UV photodetector. (e) High-magnification SEM image of 10 nm Ag NPs coated on ZnO NW arrays. (f) Darkcurrent and photocurrent as a function of applied voltage for pure ZnO and Ag-ZnO device. (g) Schematic of Au@ZnO nanoholes(HN) photodetector. (h) SEM images of the morphologies of the Au NP/ZnO HN for 40 min growth. (i) Detectivity and EQE of ZnO HN photodetector fabricated with a growth duration of 40 min as a function of light intensity. (a) Reproduced from Ref. [153]. (d?f) Reproduced from Ref. [157]. (b, c) Reproduced from Ref. [44]. (g?i) Reproduced from Ref. [162].

Fig.12 (a) Schematic of Al nanoholes GaN UV photodetector. (b) SEM of the periodic Al Nanoholes array with 220 nm diameter and 320 nm periodicity. (c) Responsivity and detectivity as the functions of illumination power under 355 nm. (d) Schematic of Au NP@GaN-nanoflowers (NF) photodetector. (e) Field emission scanning electron microscopy (FESEM) image of Au-NP@GaN-NFs, inset shows its higher magnification image. (f) Detectivity as a function of bias voltages of four kinds of photodetector device. (g) Schematic of the Au NPs/IGZO hybrid ferroelectric photodetector. (h) High resolution SEM image of the hybrid photodetector. The white bright spot are Au NPs and mean size is ~ 5 nm. (i) The transfer curves of the ferroelectric phototransistor at room temperature, both with (black line) and without (red line) Au NPs. The inset displays the transfer characteristic of the HfO₂ gate. (a?c) Reproduced from Ref. [79]. (d?f) Reproduced from Ref. [164]. (g?i) Reproduced from Ref. [168].

Fig.13 (a) Schematic of gold antenna@graphene boardband photodetector. (b) SEM image of Au heptamer array. (c) Photocurrent polarization dependence for dimer antennas (green dots) and heptamer antennas (purple dots). (d) Schematic of pentacene/Au NPs/graphene photodetector. (e) Optical microscopy image (upper panel) and integrated PL intensity map (lower panel) of the pentacene films deposited on the SiO₂ substrate and graphene. (f) Photoresponsivity and photodetectivity under a fix illumination wavelength of 520 nm as a function of optical power. (a?c) Reproduced from Ref. [172]. (d?f) Reproduced from Ref. [174].

Fig.14 (a) Schematic of Au NP grating/monolayer MoS₂ hybrid photodetector. (b) SEM image of Au NP grating structure. The period is 4 μm and the duty ratio is 1:1. The diameter of larger nanoparticle is 10 nm, and the smaller one is 5 nm. (c) Photocurrent cycle of bare MoS₂ PD, MoS₂ with different size Au NPs, and MoS₂ with Au gating photodetector. NP I: 5 nm. NP II: 10 nm. (d) Schematic of Au−MoS₂−Au photodetector. (e) Electrical field distribution of Au−MoS₂−Au structure through COMSOL simulation. (f) Specific detectivity of Au−MoS₂ and Au−MoS₂−Au devices as a function of light intensity upon 3V bias and 532 nm illumination. (g) Schematic of Au@MoS₂ field-effect phototransistors. (h) Concept and structure of the Au@MoS₂ core-shell structure. (i) Drain current as a function of bias voltage under 50 µW white light illumination. (a?c) Reproduced from Ref. [81]. (d?f) Reproduced from Ref. [177]. (g?i) Reproduced from Ref. [178].

Fig.15 (a) Schematic of graphene SWIR photodetector. (b) SEM image of Au NP array on graphene. (c) Photoresponse and photocurrent of device with and without Au NPs versus illumination power at a wavelength of 1550 nm. (d) Schematic of graphene nanodisk arrays. The graphene nanodisk arrays with 60 nm diameter and 30nm edge-to-edge gap was sandwiched between In-In₂O₃/BaF₂ substrate and ion-gel layer. Ion-gel layer with high-capacitance was used to tune the Fermi level of graphene nanodisks. (e) FTIR measurement results of transmittance, reflectance, and absorbance under different Fermi energy (0.2?0.8 eV). (f) FTIR measurement results of transmittance, reflectance, and absorbance under different disk diameter (60−180 nm). (a?c) Reproduced from Ref. [181]. (d?f) Reproduced from Ref. [82].

Fig.16 (a) Schematic of ITONPs@SLG/GeNNs array NIRPD. (b) SEM image of ITONPs@SLG/GeNNs array NIRPD. The length of GeNN arrays is about 3 µm. (c) Photoresponse for devices with and without ITONPs modification under 1550 nm light illumination at V_bias = 0 V. (d) Schematic illustration of TiN-based visible-NIR photodetector. (e) AFM image of TiN surface morphology. (f) Photoresponsivity and specific detectivity of the device. (g) Structure of a Si-QD/graphene hybrid phototransistor. (h) Distribution of electric field (|E|²) around B-doped Si QDs under 3.0 μm illumination. (i) NEP and specific detectivity of the device from 0.5 to 4 μm. The UV-to-NIR and MIR measurements were conducted at room temperature and 77 K, respectively. (a?c) Reproduced from Ref. [102]. (d?f) Reproduced from Ref. [186]. (g?i) Reproduced from Ref. [103].

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