High performance photodetector based on few-layer MoTe2/CdS0.42Se0.58 flake heterojunction

doi:10.1007/s11467-023-1374-3

Front. Phys.

2024, Vol. 19

Issue (4) : 43204 https://doi.org/10.1007/s11467-023-1374-3

High performance photodetector based on few-layer MoTe₂/CdS_0.42Se_0.58 flake heterojunction

Ran Ma¹, Qiuhong Tan^1,^2,³(

), Peizhi Yang³, Yingkai Liu^1,^2,³, Qianjin Wang^1,^2,³(

)

¹. College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China
². Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Kunming 650500, China
³. Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China

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Abstract

Two-dimensional (2D) transition metal dichalcogenides have been extensively studied due to their fascinating physical properties for constructing high-performance photodetectors. However, their relatively low responsivities, current on/off ratios and response speeds have hindered their widespread application. Herein, we fabricated a high-performance photodetector based on few-layer MoTe₂ and CdS_0.42Se_0.58 flake heterojunctions. The photodetector exhibited a high responsivity of 7221 A/W, a large current on/off ratio of 1.73×10⁴, a fast response speed of 90/120 μs, external quantum efficiency (EQE) reaching up to 1.52×10⁶ % and detectivity (D^*) reaching up to 1.67×10¹⁵ Jones. The excellent performance of the heterojunction photodetector was analyzed by a photocurrent mapping test and first-principle calculations. Notably, the visible light imaging function was successfully attained on the MoTe₂/CdS_0.42Se_0.58 photodetectors, indicating that the device had practical imaging application prospects. Our findings provide a reference for the design of ultrahigh-performance MoTe₂-based photodetectors.

Keywords photodetector MoTe₂ heterojunction visible light imaging first-principles calculations

Corresponding Author(s): Qiuhong Tan,Qianjin Wang

Issue Date: 24 January 2024

Cite this article:

Ran Ma,Qiuhong Tan,Peizhi Yang, et al. High performance photodetector based on few-layer MoTe₂/CdS_0.42Se_0.58 flake heterojunction[J]. Front. Phys. , 2024, 19(4): 43204.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1374-3
https://academic.hep.com.cn/fop/EN/Y2024/V19/I4/43204

Fig.1 (a) XRD pattern, (b) PL, (c) EDS and (d) elemental mapping of CdS_0.42Se_0.58 flake. (e) Raman spectroscopy and (f) EDS of few-layer MoTe₂ flake.

Fig.2 HRTEM images of (a) MoTe₂ and (b) CdS_0.42Se_0.58. Insets are the corresponding FFT patterns. (c) AFM profile along the red line in the inset. The inset is the 2D AFM of the isolated MoTe₂ region in the heterojunction device. (d) 3D AFM topographies of isolated MoTe₂ and CdS_0.42Se_0.58 regions in the heterojunction device.

Fig.3 (a) I−V curves of the single few-layer MoTe₂ flake, single CdS_0.42Se_0.58 flake and MoTe₂/CdS_0.42Se_0.58 flake heterojunction devices under white light of 1.5 mW/cm². The inset is an optical image of the device, in which the black arrows point to the selected test electrodes. (b) Responsivity as a function of the illumination wavelength. (c) I−V curves of the device with different light power densities. (d) Photocurrent as a function of light intensity. (e) Dependence of R, EQE and (f) D* with respect to power density under 560 nm light irradiation at a 5 V bias.

Fig.4 (a) Long-cycle stability measurement of the few-layer MoTe₂/CdS_0.42Se_0.58 heterojunction photodetector. (b) Response speeds under a switching frequency of 1 kHz.

Tab.1 Comparison of the key parameters of the CdS_xSe_1−x and MoTe₂-based photodetectors.

Fig.5 (a) Optical microscope image and (b) photocurrent mapping image of MoTe₂/CdS_0.42Se_0.58 heterojunction device. (c) Calculated energy band diagram of the MoTe₂/CdS_0.42Se_0.58 heterojunction.

Fig.6 (a) Schematic diagram of the imaging measurement system. (b) Imaging results of the “U” letter under visible light.

1	S. Novoselov K., K. Geim A., V. Morozov S., Jiang D., Zhang Y., V. Dubonos S., V. Grigorieva I., A. Firsov A.. Electric field effect in atomically thin carbon films. Science, 2004, 306(5696): 666 https://doi.org/10.1126/science.1102896
2	Yao J., Zheng Z., Yang G.. All-layered 2D optoelectronics: A high-performance UV-Vis-NIR broadband SnSe photodetector with Bi2Te3 topological insulator electrodes. Adv. Funct. Mater., 2017, 27(33): 1701823 https://doi.org/10.1002/adfm.201701823
3	Castellanos-Gomez A., Poot M., A. Steele G., S. J. van der Zant H., Agraït N., Rubio-Bollinger G.. Elastic properties of freely suspended MoS2 nanosheets. Adv. Mater., 2012, 24(6): 772 https://doi.org/10.1002/adma.201103965
4	Yao J., Yang G.. Flexible and high-performance all-2D photodetector for wearable devices. Small, 2018, 14(21): 1704524 https://doi.org/10.1002/smll.201704524
5	Wu W., Wang L., Li Y., Zhang F., Lin L., Niu S., Chenet D., Zhang X., Hao Y., F. Heinz T., Hone J., L. Wang Z.. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature, 2014, 514(7523): 470 https://doi.org/10.1038/nature13792
6	Mouri S., Miyauchi Y., Matsuda K.. Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett., 2013, 13(12): 5944 https://doi.org/10.1021/nl403036h
7	J. Čejka, M. Opanasenko, P. Nachtigall, G. Centi , S. Perathoner. C. J. Heard, 2D oxide nanomaterials to address the energy transition and catalysis, Adv. Mater. 31(3), 1801712 (2019)
8	Tang L., Meng X., Deng D., Bao X.. Confinement catalysis with 2D materials for energy conversion. Adv. Mater., 2019, 31(50): 1901996 https://doi.org/10.1002/adma.201901996
9	R. Fan F., Wang R., Zhang H., Wu W.. Emerging beyond-graphene elemental 2D materials for energy and catalysis applications. Chem. Soc. Rev., 2021, 50(19): 10983 https://doi.org/10.1039/C9CS00821G
10	X. Chen L., W. Chen Z., Jiang M., Lu Z., Gao C., Cai G., V. Singh C.. Insights on the dual role of two-dimensional materials as catalysts and supports for energy and environmental catalysis. J. Mater. Chem. A, 2021, 9(4): 2018 https://doi.org/10.1039/D0TA08649E
11	Tao P., Yao S., Liu F., Wang B., Huang F., Wang M.. Recent advances in exfoliation techniques of layered and non-layered materials for energy conversion and storage. J. Mater. Chem. A, 2019, 7(41): 23512 https://doi.org/10.1039/C9TA06461C
12	Tian Y., Chen Y., Liu Y., Li H., Dai Z.. Elemental two‐dimensional materials for Li/Na‐ion battery anode applications. Chem. Rec., 2022, 22(10): e202200123 https://doi.org/10.1002/tcr.202200123
13	Li B., Xu H., Ma Y., Yang S.. Harnessing the unique properties of 2D materials for advanced lithium–sulfur batteries. Nanoscale Horiz., 2019, 4(1): 77 https://doi.org/10.1039/C8NH00170G
14	Deng N., Feng Y., Wang G., Wang X., Wang L., Li Q., Zhang L., Kang W., Cheng B., Liu Y.. Rational structure designs of 2D materials and their applications toward advanced lithium−sulfur battery and lithium−selenium battery. Chem. Eng. J., 2020, 401(20): 125976 https://doi.org/10.1016/j.cej.2020.125976
15	Gao G., Zheng F., Pan F., W. Wang L.. Theoretical investigation of 2D conductive microporous coordination polymers as Li–S battery cathode with ultrahigh energy density. Adv. Energy Mater., 2018, 8(25): 1801823 https://doi.org/10.1002/aenm.201801823
16	Rojaee R., Shahbazian-Yassar R.. Two-dimensional materials to address the lithium battery challenges. ACS Nano, 2020, 14(3): 2628 https://doi.org/10.1021/acsnano.9b08396
17	Dodda A., Jayachandran D., Pannone A., Trainor N., P. Stepanoff S., A. Steves M., S. Radhakrishnan S., Bachu S., W. Ordonez C., R. Shallenberger J., M. Redwing J., L. Knappenberger K., E. Wolfe D., Das S.. Active pixel sensor matrix based on monolayer MoS2 phototransistor array. Nat. Mater., 2022, 21(12): 1379 https://doi.org/10.1038/s41563-022-01398-9
18	Khan U., Luo Y., Tang L., Teng C., Liu J., Liu B., M. Cheng H.. Controlled vapor–solid deposition of millimeter-size single crystal 2D Bi2O2Se for high‐performance phototransistors. Adv. Funct. Mater., 2019, 29(14): 1807979 https://doi.org/10.1002/adfm.201807979
19	G. Kim S., H. Kim S., Park J., S. Kim G., H. Park J., C. Saraswat K., Kim J., Y. Yu H.. Infrared detectable MoS2 phototransistor and its application to artificial multilevel optic-neural synapse. ACS Nano, 2019, 13(9): 10294 https://doi.org/10.1021/acsnano.9b03683
20	Namgung S., Shaver J., H. Oh S., J. Koester S.. Multimodal photodiode and phototransistor device based on two-dimensional materials. ACS Nano, 2016, 10(11): 10500 https://doi.org/10.1021/acsnano.6b06468
21	Cai Y., Yang J., Wang F., Li S., Wang Y., Zhan X., Wang F., Cheng R., Wang Z., He J.. Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In2Se3 phototransistors. Front. Phys., 2023, 18(3): 33308 https://doi.org/10.1007/s11467-022-1241-7
22	Q. Li Z., T. Yan T., S. Fang X.. Low-dimensional wide-bandgap semiconductors for UV photodetectors. Nat. Rev. Mater., 2023, 8(9): 587 https://doi.org/10.1038/s41578-023-00583-9
23	Zeng H., Wen Y., Yin L., Cheng R., Wang H., Liu C., He J.. Recent developments in CVD growth and applications of 2D transition metal dichalcogenides. Front. Phys., 2023, 18(5): 53603 https://doi.org/10.1007/s11467-023-1286-2
24	Zhang G., Shu Y., Yao J., Shu Q., Deng H., Jia G., Wang Z.. Characteristics and developments of quantum-dot infrared photodetectors. Front. Phys. China, 2006, 1(3): 334 https://doi.org/10.1007/s11467-006-0030-z
25	He K., Zhu J., Li Z., Chen Z., Zhang H., Liu C., Zhang X., Wang S., Zhao P., Zhou Y., Zhang S., Yin Y., Zheng X., Huang W., Wang L.. High-sensitive two-dimensional PbI2 photodetector with ultrashort channel. Front. Phys., 2023, 18(6): 63305 https://doi.org/10.1007/s11467-023-1323-1
26	H. An C., Nie F., Zhang R., Ma X., Wu D., Sun Y., Hu X., Sun D., Pan L., Liu J.. Two‐dimensional material‐enhanced flexible and self‐healable photodetector for large‐area photodetection. Adv. Funct. Mater., 2021, 31(22): 2100136 https://doi.org/10.1002/adfm.202100136
27	Maiti R., Patil C., A. S. R. Saadi M., Xie T., G. Azadani J., Uluutku B., Amin R., F. Briggs A., Miscuglio M., Van Thourhout D., D. Solares S., Low T., Agarwal R., R. Bank S., J. Sorger V.. Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits. Nat. Photonics, 2020, 14(9): 578 https://doi.org/10.1038/s41566-020-0647-4
28	Octon T., Nagareddy V., Russo S., F. Craciun M., D. Wright C.. Fast high-responsivity few-layer MoTe2 photodetectors. Adv. Opt. Mater., 2016, 4(11): 1750 https://doi.org/10.1002/adom.201600290
29	Yin L., Zhan X., Xu K., Wang F., Wang Z., Huang Y., Wang Q., Jiang C., He J.. Ultrahigh sensitive MoTe2 phototransistors driven by carrier tunneling. Appl. Phys. Lett., 2016, 108(4): 043503 https://doi.org/10.1063/1.4941001
30	Huang H., Wang J., Hu W., Liao L., Wang P., Wang X., Gong F., Chen Y., Wu G., Luo W., Shen H., Lin T., Sun J., Meng X., Chen X., Chu J.. Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect. Nanotechnology, 2016, 27(44): 445201 https://doi.org/10.1088/0957-4484/27/44/445201
31	Chen Y., Wang X., Wu G., Wang Z., Fang H., Lin T., Sun S., Shen H., Hu W., Wang J., Sun J., Meng X., Chu J.. High‐performance photovoltaic detector based on MoTe2/MoS2 van der Waals heterostructure. Small, 2018, 14(9): 1703293 https://doi.org/10.1002/smll.201703293
32	Y. Lu M., T. Chang Y., J. Chen H.. Efficient self-driven photodetectors featuring a mixed-dimensional van der Waals heterojunction formed from a CdS nanowire and a MoTe2 flake. Small, 2018, 14(40): 1802302 https://doi.org/10.1002/smll.201802302
33	Chen J.Shan Y.Wang Q.Zhu J.Liu R., P-type laser-doped WSe2/MoTe2 van der Waals heterostructure photodetector, Nanotechnology 31(29), 295201 (2020)
34	Lu Z., Xu Y., Yu Y., Xu K., Mao J., Xu G., Ma Y., Wu D., Jie J.. Ultrahigh speed and broadband few‐layer MoTe2/Si 2D–3D heterojunction‐based photodiodes fabricated by pulsed laser deposition. Adv. Funct. Mater., 2020, 30(9): 1907951 https://doi.org/10.1002/adfm.201907951
35	O. Loutfy R., S. Ng D.. Electrodeposited polycrystalline thin films of cadmium chalcogenides for backwall photoelectrochemical cells. Solar Energy Mater., 1984, 11(4): 319 https://doi.org/10.1016/0165-1633(84)90050-9
36	Smidstrup S., Stradi D., Wellendorff J., A. Khomyakov P., G. Vej-Hansen U., E. Lee M., Ghosh T., Jónsson E., Jónsson H., Stokbro K.. First-principles green’s-function method for surface calculations: A pseudopotential localized basis set approach. Phys. Rev. B, 2017, 96(19): 195309 https://doi.org/10.1103/PhysRevB.96.195309
37	Grimme S.. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem., 2006, 27(15): 1787 https://doi.org/10.1002/jcc.20495
38	A. Hossain M., R. Jennings J., Mathews N., Wang Q.. Band engineered ternary solid solution CdSxSe1−x sensitized mesoscopic TiO2 solar cells. Phys. Chem. Chem. Phys., 2012, 14(19): 7154 https://doi.org/10.1039/c2cp40277g
39	Yang S., Tongay S., Li Y., Yue Q., B. Xia J., S. Li S., Li J., H. Wei S.. Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors. Nanoscale, 2014, 6(13): 7226 https://doi.org/10.1039/c4nr01741b
40	Chen G., Liu Z., Liang B., Yu G., Xie Z., Huang H., Liu B., Wang X., Chen D., Q. Zhu M., Shen G.. Single-crystalline p-type Zn3As2 nanowires for field-effect transistors and visible-light photodetectors on rigid and flexible substrates. Adv. Funct. Mater., 2013, 23(21): 2681 https://doi.org/10.1002/adfm.201202739
41	H. Chen Y., X. Su L., M. Jiang M., S. Fang X.. Switch type PANI/ZnO core-shell microwire heterojunction for UV photodetection. J. Mater. Sci. Technol., 2022, 105: 259 https://doi.org/10.1016/j.jmst.2021.07.031
42	Y. Li S.Zhang Y.Yang W.Liu H.Fang X., 2D Perovskite Sr2Nb3O10 for High‐Performance UV Photodetectors, Adv. Mater. 32(7), 1905443 (2020)
43	Zhang Y., Yao J., Zhang Z., Zhang R., Li L., Teng Y., J. Shen Z., X. Kang L., M. Wu L., S. Fang X.. Two-dimensional perovskite Pb2Nb3O10 photodetectors. J. Mater. Sci. Technol., 2023, 164: 95 https://doi.org/10.1016/j.jmst.2023.05.011
44	X. Liu B., Sun Y., Wu Y., Liu K., Ye H., Li F., Zhang L., Jiang Y., Wang R.. Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating. Nano Res., 2021, 14(4): 982 https://doi.org/10.1007/s12274-020-3137-6
45	Yan J., Yang X., Liu X., Du C., Qin F., Yang M., Zheng Z., Li J.. Van der Waals heterostructures with built‐in Mie resonances for polarization‐sensitive photodetection. Adv. Sci., 2023, 10(9): 2207022 https://doi.org/10.1002/advs.202207022
46	Lai J., Liu X., Ma J., Wang Q., Zhang K., Ren X., Liu Y., Gu Q., Zhuo X., Lu W., Wu Y., Li Y., Feng J., Zhou S., H. Chen J., Sun D.. Anisotropic broadband photoresponse of layered type-II Weyl semimetal MoTe2. Adv. Mater., 2018, 30(22): 1707152 https://doi.org/10.1002/adma.201707152https://doi.org/10.1002/advs.202207022
47	Chen P., Pi L., Li Z., Wang H., Xu X., Li D., Zhou X., Zhai T.. GeSe/MoTe2 vdW heterostructure for UV-VIS-NIR photodetector with fast response. Appl. Phys. Lett., 2022, 121(2): 021103 https://doi.org/10.1063/5.0090426
48	W. Park J., S. Jung Y., H. Park S., J. Choi H., S. Cho Y.. High‐performance photoresponse in ferroelectric d1T‐MoTe2‐based vertical photodetectors. Adv. Opt. Mater., 2022, 10(21): 2200898 https://doi.org/10.1002/adom.202200898
49	Guo P., Xu J., Gong K., Shen X., Lu Y., Qiu Y., Xu J., Zou Z., Wang C., Yan H., Luo Y., Pan A., Zhang H., C. Ho J., M. Yu K.. On-nanowire axial heterojunction design for high-performance photodetectors. ACS Nano, 2016, 10(9): 8474 https://doi.org/10.1021/acsnano.6b03458
50	Chen W., Liang R., Zhang S., Liu Y., Cheng W., Sun C., Xu J.. Ultrahigh sensitive near-infrared photodetectors based on MoTe2/germanium heterostructure. Nano Res., 2020, 13(1): 127 https://doi.org/10.1007/s12274-019-2583-5
51	Xia J., X. Zhao Y., Wang L., Z. Li X., Y. Gu Y., Q. Cheng H., M. Meng X.. Van der Waals epitaxial two-dimensional CdSxSe1−x semiconductor alloys with tunable-composition and application to flexible optoelectronics. Nanoscale, 2017, 9(36): 13786 https://doi.org/10.1039/C7NR04968D

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