Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell

doi:10.1007/s12200-016-0599-y

Front. Optoelectron.

2016, Vol. 9

Issue (2) : 306-311 https://doi.org/10.1007/s12200-016-0599-y

RESEARCH ARTICLE

Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell

Zhuo DENG¹,Jiqiang NING^1,²,Rongxin WANG²,Zhicheng SU¹,Shijie XU^1,^*(

),Zheng XING²,Shulong LU²,Jianrong DONG²,Hui YANG²

1. Department of Physics, HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China
2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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Abstract

In this paper, influence of temperature and reverse bias on photocurrent spectrum and spectral response of a monolithic GaInP/GaAs double-junction solar cell was investigated in detail. Two sharp spectral response offsets, corresponding to the bandedge photo absorption of the bottom GaAs and the top GaInP subcells, respectively, show the starting response points of individual subcells. More interestingly, the cell photocurrent was found to enhance significantly with increasing the temperature. In addition, the cell photocurrent also increases obviously as the reverse bias voltage increases. The integrated photocurrent intensity of the top GaInP subcell was particularly addressed. A theoretical model was proposed to simulate the reverse bias dependence of the integrated photocurrent of the GaInP subcell at different temperatures.

Keywords GaInP alloy GaAs solar cell photocurrent

Corresponding Author(s): Shijie XU

Just Accepted Date: 18 February 2016 Online First Date: 29 March 2016 Issue Date: 05 April 2016

Cite this article:

Zhuo DENG,Jiqiang NING,Rongxin WANG, et al. Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell[J]. Front. Optoelectron., 2016, 9(2): 306-311.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-016-0599-y
https://academic.hep.com.cn/foe/EN/Y2016/V9/I2/306

Fig.1 Photocurrent spectra recorded from Sample 2° at different temperatures without the application of external bias voltage. Several spectral features are indicated by arrows and labels

Fig.2 ?Temperature dependence (solid squares) of the photocurrent sharp peak due to the bandedge absorption of GaInP in the top subcell. Solid line is the fitting curve with the Varshni empirical formula

Fig.3 Photocurrent spectra measured from Sample 2° at 10, 80, 160 and 300 K for different reverse bias voltages. The reverse bias voltage increases from 0 to -4 V. Several spectral features are marked by arrows and labels in the bottom figure

Fig.4 ?Dependences of the integrated intensity of photocurrent with energy≥E_GaInP on the reverse bias voltage at different temperatures excerpted from Fig. 3. Theoretical fitting curves with Eq. (9) are also shown by the solid curves at each temperature

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